PMV22EN,215 Discrete Semiconductor Products |
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Allicdata Part #: | 568-7535-2-ND |
Manufacturer Part#: |
PMV22EN,215 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | MOSFET N-CH 30V 5.2A SOT23 |
More Detail: | N-Channel 30V 5.2A (Ta) 510mW (Ta) Surface Mount T... |
DataSheet: | PMV22EN,215 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | TO-236AB (SOT23) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 510mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 480pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 13nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 22 mOhm @ 5.2A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 5.2A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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PMV22EN,215 is a type of high-voltage, vertical Structure p-channel Metal Oxide Semiconductor Field Effect Transistors (MOSFETs). PMV22EN,215 can operate in surface-mount packages in various configurations. It is designed to provide higher switching speeds and lower gate threshold voltage than conventional MOSFETs.
It has the benefit of being inherently linear with low gate drive requirements, which can make it ideal for applications that require low noise and power efficiency. Additionally, it is generally easier to use than other types of FETs such as Junction Field Effect Transistors (JFETs).
Applications for PMV22EN,215 include high frequency switching, high voltage power conversion, motor control, automotive, power management and data acquisition. In addition, it can be used for switching other high power devices such as lamps, relays, and digital light modulation.
The working principle of the PMV22EN,215 is based on the concept of charge carriers. A current is passed through the gate which causes charges to accumulate on the source side, thereby creating a strong electric field which controls the current flow and increases the device’s output. By varying the gate voltage, the current flow through the device can be adjusted and switched on or off.
The main parameter that determines how well the PMV22EN,215 operates is the threshold voltage. This can be adjusted by the amount of charge on the gate and driven by the voltage supplied by a bias voltage source. As the voltage applied to the source is increased, the voltage drops across the drain and source increases and the threshold voltage needs to be reduced.
The PMV22EN,215 is also capable of operating with very low on-resistances for a given device size, enabling it to be used in a wide range of applications. This device can be used in either a single package or an integrated circuit and will provide good performance over a wide temperature range.
In summary, PMV22EN,215 is a type of high-voltage, vertical Structure p-channel MOSFET that can be used in a variety of applications. It has a low threshold voltage and is capable of operating with low on-resistances. Additionally, it can be easily integrated into an existing circuit and can operate in a wide temperature range. With these features, PMV22EN,215 can be an excellent choice for a variety of applications in which low noise and power efficiency are desired.
The specific data is subject to PDF, and the above content is for reference
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