PSMN038-100YLX

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The P-channel insulated gate field effect transistor (IGFET) with enhanced fast body diode, PSMN038-100YLX, is a high performance transistor specifically designed for LAN, DSL and other high power applications. It is a single MOSFET with a 150V rating and an R_DS(ON) value of 7.9mOhms @ 10V and 3.2mOhms @ 4.5V. The primary focus of the PSMN038-100YLX is to provide a higher power performance with increased power efficiency and a smaller sOT-223 package. The excellent ESD robustness helps equipment manufacturers to increase their functionality and reduce the impact on their ESD budget.

The P-channel IGFET utilizes an N-channel and P-channel semiconductor source which provides the control over the current flow and reduce the on-resistance for the higher voltages. The N-channel and P-channel operation allows the design engineer to optimize the voltage and current requirements of the application. This helps to achieve maximum power efficiency and reduce overall system cost. The P-channel IGFET also offers increased current handling capability which can provide higher levels of current than traditional N-channel devices. The ESD robustness makes the IGFET ideal for use in systems that require fast switching and protection against electrostatic discharges.

The PSMN038-100YLX is suitable for use in a variety of applications. The main application field of the device is high power applications such as LAN, DSL, or other applications that require fast switching, high power efficiency and a reduced footprint. It is also suitable for various industrial and automotive applications, such as motor control, PC power management, and battery management systems, making it an ideal choice for designers.

The working principle of the P-channel insulated gate field effect transistor is based on the charge-density principle, with the flow of the electrons governed by the size of the gate. When the gate is neutral, the electrons move freely throughout the device and the drain-source current (I_DS) is independent of the gate voltage (V_GS). When a gate signal is applied, excess electrons accumulate at the gate region and form an electric field between the gate and source-drain regions. This electric field exerts a force on the electrons that are present in the region, and the resulting movement of electrons is referred to as “channel modulation”. The result of this channel modulation is a controllable current that flows between the source and drain of the device. The resulting current is controlled by the gate voltage, V_GS, which determines the current-voltage characteristics of the device.

The PSMN038-100YLX also offers several advanced features such as accurate over-temperature protection, improved immunity from dV/dt noise, improved body diode reverse recovery time, and switched-mode power supply (SMPS) features such as low gate charge for superior switching performance, high maximum efficiency, and low drain-source capacitance. These features allow the designer to achieve higher efficiency in their applications and reduce system cost.

In conclusion, the PSMN038-100YLX is a single P-channel IGFET with a 150V rating and an R_DS(ON) value of 7.9mOhms @ 10V and 3.2mOhms @ 4.5V. It is suitable for use in high power applications, as well as various industrial and automotive applications. It features improved ESD robustness and accurate over-temperature protection, as well as improved switching performance due to low gate charge and low drain-source capacitance. The working principle of the P-channel insulated gate field effect transistor is based on the charge-density principle, with the flow of the electrons governed by the size of the gate.

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