Allicdata Part #: | 1727-7214-2-ND |
Manufacturer Part#: |
PSMN7R0-100BS,118 |
Price: | $ 0.95 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 100V 100A D2PAK |
More Detail: | N-Channel 100V 100A (Tc) 269W (Tc) Surface Mount D... |
DataSheet: | PSMN7R0-100BS,118 Datasheet/PDF |
Quantity: | 4000 |
800 +: | $ 0.86414 |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 269W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 6686pF @ 50V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 125nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 6.8 mOhm @ 15A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 100A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The PSMN7R0-100BS,118 is a type of Transistor and falls under the FETs or Field Effect Transistor category often referred to as MOSFETs (Metal Oxide Semiconductor Field Effect Transistors). This particular transistor is classified as a single, referring to its design and one type of field effect it can generate within a transistor.
A MOSFET is an amplifier designed to control electrical current. It allows the current that passes through the source and drains to be determined by the voltage level at the gate. This type of transistor has many distinct advantages that set it apart from other transistor designs such as very high input impedance, fast switching capability, and low power consumption. They are also typically used in operations where very fast switching speeds are required. It is a more effective and efficient alternative to other forms of transistors.
The PSMN7R0-100BS,118 is a single package MOSFET that includes a body diode and is used in switching applications. The body diode eliminates the need for an external diode, making it more efficient and cost-effective. The gate-source threshold voltage (VGS(th)) of this particular MOSFET is 4.9 V which makes it suitable for a range of applications with different voltages. It performs well in low voltage and low current devices, such as digital circuits and can easily switch on and off digital signals with a corresponding binary switch.
The PSMN7R0-100BS,118 has a maximum drain current of ±100 mA, a drain-source resistance of 75MΩ and a maximum power dissipation of 160mW. It has a drain-source breakdown voltage of -100V. This MOSFET is manufactured using NXP semiconductor process technology which provides excellent operating characteristics and reliability.
This MOSFET can be used in a variety of applications and is often found in motorized vehicles, notebook computers, COPs, home-office appliances and air conditioners. The PSMN7R0-100BS,118 is widely used in digital switching and low speed processing applications and can be used to drive LED, CMOS, TTL or other digital devices.
In summary, the PSMN7R0-100BS,118 is a single packaged MOSFET and is ideal for a range of applications that require low voltage and low current control. It is a reliable, cost-effective and efficient alternative to other transistors and is commonly used in a variety of digital switching, low speed processing applications as well as motorized vehicles, home appliances and air conditioners.
The specific data is subject to PDF, and the above content is for reference
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