| Allicdata Part #: | PTFA261301FV1-ND |
| Manufacturer Part#: |
PTFA261301F V1 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | IC FET RF LDMOS 130W H-31260-2 |
| More Detail: | RF Mosfet LDMOS 28V 1.4A 2.68GHz 13.5dB 130W H-312... |
| DataSheet: | PTFA261301F V1 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | GOLDMOS® |
| Packaging: | Tray |
| Part Status: | Obsolete |
| Transistor Type: | LDMOS |
| Frequency: | 2.68GHz |
| Gain: | 13.5dB |
| Voltage - Test: | 28V |
| Current Rating: | 10µA |
| Noise Figure: | -- |
| Current - Test: | 1.4A |
| Power - Output: | 130W |
| Voltage - Rated: | 65V |
| Package / Case: | 2-Flatpack, Fin Leads, Flanged |
| Supplier Device Package: | H-31260-2 |
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The PTFA261301F V1 is a field effect transistor (FET) designed specifically for use in radio-frequency (RF) applications. This device is manufactured using the latest microelectronics technology and is widely considered to be a reliable and high-performance solution for many RF applications. This article provides an overview of the PTFA261301F V1\'s application fields and working principle.
Application Fields
The PTFA261301F V1 transistor is used in a variety of different RF applications, such as:
- Cellular phones
- Wi-Fi and Bluetooth equipment
- Wireless communication systems
- Radio equipment
- Satellite ground station equipment
- Radar systems
These devices are highly suitable for these applications due to their high-frequency performance, low-noise characteristics, and their ability to switch quickly and efficiently.
Working Principle
The PTFA261301F V1 transistor is designed to operate as a three-terminal device, with each terminal representing one of the three main elements of the field-effect transistor. The source terminal represents the input signal, the gate terminal is used to control the current flow between the source and drain terminals, and the drain terminal represents the output of the device.
The function of the PTFA261301F V1 transistor works as follows: when a voltage is applied to the gate terminal, it creates a field in the semiconductor material between the source and drain terminals. This field affects the conductivity of the channel between the two terminals, allowing current to flow from the source to the drain generator. This field intensity can be varied by adjusting the gate voltage, allowing the transistor to act as an amplifier or switch, depending on its application.
Conclusion
In conclusion, the PTFA261301F V1 transistor is a reliable and high-performance solution for many RF applications, due to its high-frequency performance, low-noise characteristics, and its ability to switch quickly and efficiently. Its ability to be used as either an amplifier or a switch, depending on the application, makes it a versatile device for many different applications.
The specific data is subject to PDF, and the above content is for reference
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PTFA261301F V1 Datasheet/PDF