PUMD13,115 Discrete Semiconductor Products

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A PUMD13,115 is a type of field-controlled transistor array. This array is made up of two transistors with different polarities - one a bipolar junction transistor (BJT), and the other a pre-biased circuit element. The application field of this device is in power supply, sensing, multi-stage switching, and low-voltage protection. The pre-bias offers better protection to the transistor in the eventuality of transients or faults.

The device is rated for a peak forward current of 1.5 A, a maximum power dissipation of 1.35 W and a voltage between the collector and emitter of up to 200V. It has two pins, the collector and emitter, and is usually mounted on a printed circuit board (PCB). It has a standard pinout, which is the same as that of the majority of transistors available on the market.

The working principle of the device is straightforward. When a forward-biased voltage is applied between the collector and emitter, current flows from the collector to the emitter. The transistor is then turned on, allowing current to flow from the collector to the emitter. At the same time, the pre-bias circuit connected to the emitter is activated, ensuring that the circuit is protected from transients and faults.

The main advantage of this device is its ability to operate in high-voltage, current-sensitive applications. It is also easy to use, as it has a simple pinout and requires no additional components. Additionally, it is small in size, making it ideal for power supply applications where space is limited.

The PUMD13,115 is an important device in the array of transistors and pre-biased circuits, due to its applications in power supply, sensing, multi-stage switching, and low-voltage protection. This device is easy to use, small in size and offers superior protection from transients and faults.

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