PUMH2,115 Discrete Semiconductor Products

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The PUMH2,115 is a series of pre-biased and power transistor array products manufactured by Sanyo Semiconductor. These devices are an excellent solution for usage in small and medium power applications since they combine high power and low voltage drop. The devices are based on SST’s proprietary SST-X2002™ bipolar junction transistor (BJT) technology, which enables low on-resistance and high breakdown voltage. The PUMH2,115 devices consist of two transistors and two resistors, which are used for pre-biasing the transistors prior to use.

The PUMH2,115 devices are ideally suited for electricity converters, DC-DC converters, high voltage loads, switching converters, and high current switching loads. They offer excellent performance, providing reduced power dissipation and improved thermal performance, while still offering high withstanding voltage. The devices also offer low EMI and ESD sensitivity, making them well suited for circuits with high EMI requirements.

The primary function of the PUMH2,115 transistors is to provide power amplification and voltage regulation. The PUMH2,115 devices use the two transistors as two input and two output terminals, for a total of four terminals. The pre-biased nature of the device’s operation eliminates the need for voltage biasing, which helps reduce power consumption. The PUMH2,115 transistors operate in the common emitter configuration, with the base connected to the output terminal, and the emitter connected to ground.

The devices have an integrated protection scheme that safely limits the maximum output current, providing added protection against short circuits. This protection scheme also helps protect the device against overvoltage conditions, making it highly reliable and robust.

The PUMH2,115 transistors offer a wide operating temperature range, providing up to +125°C junction temperature rating. The devices are also RoHS compliant and are made with lead-free solder.

In summary, the PUMH2,115 is a series of pre-biased power transistor arrays that provide excellent performance for DC-DC and high current switching applications. These devices offer low voltage drop and high power and are based on SST’s proprietary SST-X2002™ bipolar junction transistor (BJT) technology, providing low on-resistance and high break down voltage. The integrated protection scheme safely limits the maximum output current, providing added protection against short circuits and overvoltage conditions. The PUMH2,115 transistors are RoHS compliant and offer a wide operating temperature range, providing up to +125°C junction temperature rating.

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