| Allicdata Part #: | RC28F00AM29EWHA-ND |
| Manufacturer Part#: |
RC28F00AM29EWHA |
| Price: | $ 0.00 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | Micron Technology Inc. |
| Short Description: | IC FLASH 1G PARALLEL 64FBGA |
| More Detail: | FLASH - NOR Memory IC 1Gb (128M x 8, 64M x 16) Par... |
| DataSheet: | RC28F00AM29EWHA Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Packaging: | Tray |
| Part Status: | Obsolete |
| Memory Type: | Non-Volatile |
| Memory Format: | FLASH |
| Technology: | FLASH - NOR |
| Memory Size: | 1Gb (128M x 8, 64M x 16) |
| Write Cycle Time - Word, Page: | 100ns |
| Access Time: | 100ns |
| Memory Interface: | Parallel |
| Voltage - Supply: | 2.7 V ~ 3.6 V |
| Operating Temperature: | -40°C ~ 85°C (TA) |
| Mounting Type: | Surface Mount |
| Package / Case: | 64-LBGA |
| Supplier Device Package: | 64-FBGA (11x13) |
| Base Part Number: | 28F00AM29EW |
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RC28F00AM29EWHA is a popular non-volatile memory offering program code storage, data storage and parameter storage. It is widely used in embedded applications such as gaming consoles, calculator, remote control and medical equipment.
Application Field
The RC28F00AM29EWHA is a one-time programmable (OTP) memory that offers a wide range of advantages in embedded applications. These advantages include low power consumption, high-speed data transfers, non-volatile memory (NVM) functionality, and more. The RC28F00AM29EWHA is ideal for applications requiring both large code and data storage capacity and flexibility. It is suitable for stand-alone, real-time operation and in a wide range of embedded applications such as gaming consoles, calculator, remote control and medical equipment, automotive application and industrial control. The OTP memory also offers excellent circuit protection and can withstand high voltage transients, making it suitable for industrial applications.
Working Principle
The working principle of the RC28F00AM29EWHA is based on the use of capacitors to store and erase data. The memory device is divided into four blocks, each containing four independent storage cells. The storage cells are divided into two sub-blocks, 16Kbytes each, that are further divided into four 4Kbyte sectors. All of the four sectors are magnetically sensitive and can store 256-bits of data, allowing a total capacity of 32Kbytes. The cells are programmed using a programming voltage, which establishes a tiny capacitance in the cells, thus changing their resistance and marking them for later retrieval. The programming time for the cells can vary from a few seconds to several minutes depending on the number of cells to be programmed and the programming voltage used.
When data is to be retrieved from the RC28F00AM29EWHA, the address of the required data is sent to the memory device which adjusts the cells’ resistance to correspond to the data stored in the already programmed cells. Data read from the memory is transferred to the desired destination via two lines, one for data and one for the address. Once the data read is completed, the cells’ resistance is restored to its original state. The entire read process usually takes only a few microseconds.
In order to erase the data stored in the RC28F00AM29EWHA, the cells’ resistance is increased to the maximum level by applying a programming voltage. This restores the memory cell to its original state, erasing all stored data. This erase operation takes several minutes and needs to be done when the memory device needs to be reprogrammed.
The RC28F00AM29EWHA is a highly reliable non-volatile memory device, offering low power consumption, high speed data transfers and flexibility. This device is a perfect choice for embedded applications requiring both large code and data storage capacity and flexibility.
The specific data is subject to PDF, and the above content is for reference
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RC28F00AM29EWHA Datasheet/PDF