RC28F256P33TFE

Memory

RC28F256P33TFE is a 256-megabit NAND Flash Memory designed by Macronix. This type of memory is widely used in on-chip memory of various portable electronic products and is widely used in industrial control products, automotive electronics, digital cameras and video devices.

Application field

RC28F256P33TFE NAND Flash Memory widely used in on-chip memory of various portable electronic products. It widely used in industrial control products, automotive electronics, digital cameras and video devices. The high-capability of NAND Flash Memory makes it more compact and also more durable, compared to other types of memory. Furthermore, this type of memory is relatively low cost due to its low power consumption and high integration.

The high capacity NAND Flash Memory is well-known for its capability of withstanding environment pressure, like temperature, humidity, ESD, and X-ray, etc. The temperature is within the range of 0℃ to 70℃ and USB3.0/3.1 interface are popular features of this type of memory. Furthermore, this type of memory has wide power supply voltage range which is 1.8v to 5.5v, making it suitable for many applications.

RC28F256P33TFE NAND Flash Memory is a popular choice when it comes to industrial products due to its heat-resistant, low power consumption and high integration features. Its high capacity memory makes it capable of running multiple devices simultaneously, allowing features like forward and backward compatibility. Furthermore, its capable of withstanding extreme environment conditions and also has a wide range of operating voltages.

Working Principle

RC28F256P33TFE NAND Flash Memory is based on Floating Gate technology, which works on an electron-hole principle. The memory cell consists of two insulated layers, with a layer of electrons between them. When a positive voltage is applied to the correct gate, the electrons will flow through the insulated layer, thus storing a bit of data. This information is then retrieved by reading the voltage across the same gate.

The memory cell can store more than one bit of data, because more than one voltage value is needed for storing data. The lowest voltage determines the least significant bit, and the highest voltage determines the most significant bit. When a row of memory cell is set to different voltages, this can be interpreted as multiple bits of data.

The advantages of RC28F256P33TFE NAND Flash Memory are many. It has a high data rate with low power consumption, making it ideal for applications that require small amounts of data but large amounts of power. It also has a low manufacturing cost due to its low voltage operation. Furthermore, the memory cell is non-volatile, meaning that the data stored on it will remain even without power supply.

RC28F256P33TFE NAND Flash Memory is an advanced and reliable solution for storing important data. With a wide range of application fields and easy to use working principle, this type of memory is sure to satisfy the increasing demands of modern computing.