Allicdata Part #: | RDD022N60TL-ND |
Manufacturer Part#: |
RDD022N60TL |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET N-CH 600V CPT |
More Detail: | N-Channel 600V 2A (Tc) 20W (Tc) Surface Mount CPT3 |
DataSheet: | RDD022N60TL Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4.7V @ 1mA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | CPT3 |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 20W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 175pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 7nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 6.7 Ohm @ 1A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 2A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Not For New Designs |
Packaging: | Tape & Reel (TR) |
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:The RDD022N60TL is a polarized, trench gate field-effect transistor, manufactured with N-channel MOSFET technology. It is commonly used in applications that require a medium voltage and power dissipation. The device has very low on-resistance and is an ideal choice for high frequency switching and PFC circuits, as well as for applications that require high efficiency. The device also features fast switching and a rugged, long life operation.
The RDD022N60TL operates in a way that a voltage applied to the gate terminal induces a modulation in the channel resistance between the drain and source terminals. When the voltage of the gate is reduced, the channel resistance increases, and consequently, the source to drain current decreases. This modulation is due to the existence of the thin layer of insulating oxide between the gate and the channel that modulates the source to drain current within a certain voltage range. When the gate voltage reaches a certain level, the channel will reach the so called pinch-off and the drain current reaches its minimal value.
This device offers several advantages over other devices, such as enhanced switching performance, high level of reliability and low power consumption. The device has a low thermal resistance and features an internal gate protection circuit that prevents device from excessive gate voltage transients. Moreover, the device employs a trench gate process and a short lead frame, which helps minimize switching losses and reduce noise.
The RDD022N60TL is suitable for use in automotive applications, such as air-conditioning systems, DC/DC converters, battery charge and discharge circuits, electric motor control systems, and various other power applications. It is also well suited for industrial applications, such as input power factor correction, adjustable current source, and solar inverter circuits, as well as for white goods and appliance control applications.
In conclusion, the RDD022N60TL is a highly efficient and reliable field-effect transistor that can be used in a variety of applications. With its low power consumption, fast switching, and high level of reliability, the device is ideal for applications that require high efficiency, low noise, and low thermal resistance.
The specific data is subject to PDF, and the above content is for reference
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