RFD14N05SM9A Discrete Semiconductor Products

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The RFD14N05SM9A FET transistor is a type of metal-oxide-semiconductor field-effect transistor. It is a single, low-capacitance, low on-resistance, N-Channel MOSFET designed for use in general-purpose switching and linear applications. The device is specially designed for use in portable beeping and alarm devices, cellular handsets, RFID devices and other consumer and battery-powered electronics. The RFD14N05SM9A offers advanced performance, low-capacitance, and low-on-resistance which is ideal for low-power applications.

A basic application field of the RFD14N05SM9A is general-purpose switching and transistor replacement. It provides a low on-resistance figure and extremely low capacitance which is ideal for low-power application. It is also suitable for use in low-power applications as it can be used for high-frequency RF switching and as a low-output impedance switch. Due to its low-power operation, it is also ideal for powering LED circuits which require a low on-resistance. Additionally, it can be used to drive loads which require fast switching times, such as motor and solenoid driver circuits.

The RFD14N05SM9A works on the principle of a field-effect transistor (FET). A FET works by creating an electric field which controls the flow of electrons through the channel. The electrons are allowed to enter the channel when a positive gate voltage is applied, and this opens up an electric field between the source and drain. This electric field allows for the flow of electrons from the source to the drain, and current flows through the channel. This flow of current is regulated by the device’s gate voltage, which is controlled by the user. The RFD14N05SM9A operates by using a low-capacitance and low-on-resistance channel, which makes it ideal for low-power applications.

The RFD14N05SM9A is an ideal choice for a variety of applications due to its cost-effectiveness and its low-capacitance and low-on-resistance channel. It is designed for general-purpose switching and transistor replacement and is suitable for low-power applications, such as powering LED circuits and driving loads which require fast switching times, such as motor and solenoid driver circuits. It works on the principle of a field-effect transistor and is capable of controlling the flow of electrons through the channel by using a positive gate voltage..

The specific data is subject to PDF, and the above content is for reference