| Allicdata Part #: | RFG60P05E-ND |
| Manufacturer Part#: |
RFG60P05E |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET P-CH 50V 60A TO-247 |
| More Detail: | P-Channel 50V 60A (Tc) 215W (Tc) Through Hole TO-2... |
| DataSheet: |  RFG60P05E Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Packaging: | Tube |
| Part Status: | Obsolete |
| FET Type: | P-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 50V |
| Current - Continuous Drain (Id) @ 25°C: | 60A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Rds On (Max) @ Id, Vgs: | 30 mOhm @ 60A, 10V |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 450nC @ 20V |
| Vgs (Max): | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds: | 7200pF @ 25V |
| FET Feature: | -- |
| Power Dissipation (Max): | 215W (Tc) |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Through Hole |
| Supplier Device Package: | TO-247 |
| Package / Case: | TO-247-3 |
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The RFG60P05E is a high-voltage N-channel field-effect power MOSFET from Fairchild Semiconductor. This device is designed and optimized to deliver high-speed switching performance over a wide range of load conditions. It is suitable for applications such as high-side switches, light dimming, motor control, and various other applications.
The RFG60P05E is a N-channel enhancement-mode power MOSFET. This type of MOSFET allows current to flow from the drain to the source when a positive gate-to-source voltage is applied. This voltage increases the conductivity of the channel, allowing more current to flow. The device is constructed using State-of-the-art geometry processes and features a SPAK package.
The RFG60P05E is a voltage-controlled device, meaning that its on-resistance is proportional to the gate-source voltage applied. This allows the RFG60P05E to be used as a high-side switch, allowing it to switch up to an output voltage that is higher than the supply voltage. This makes the MOSFET ideal for high-voltage switching applications such as motor control, light dimming and similar applications.
The RFG60P05E also features an integrated back gate drive circuit which allows for smoother turn-on and turn-off of the device, as well as faster switching. This allows the device to be used in applications where a fast edge rate is required.
The RFG60P05E is a high-speed, high-voltage MOSFET that is suitable for a wide range of applications. Its high-speed switching characteristics, combined with its integrated back gate drive circuit, make it an ideal choice for applications requiring a fast edge rate and smooth operation.
The specific data is subject to PDF, and the above content is for reference
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