Allicdata Part #: | RLZTE-1136C-ND |
Manufacturer Part#: |
RLZTE-1136C |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | DIODE ZENER 33.6V 500MW LLDS |
More Detail: | Zener Diode 33.6V 500mW ±3% Surface Mount LLDS |
DataSheet: | RLZTE-1136C Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Voltage - Zener (Nom) (Vz): | 33.6V |
Tolerance: | ±3% |
Power - Max: | 500mW |
Impedance (Max) (Zzt): | 75 Ohms |
Current - Reverse Leakage @ Vr: | 200nA @ 27V |
Operating Temperature: | -- |
Mounting Type: | Surface Mount |
Package / Case: | DO-213AC, MINI-MELF, SOD-80 |
Supplier Device Package: | LLDS |
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Diodes - Zener - Single: RLZTE-1136C Application Field and Working Principle
The RLZTE-1136C is a single-breakdown Zener diode designed for use in a variety of applications. Its functionality is based on the use of avalanche breakdown, in which the diode’s internal electric field increases with increasing reverse bias voltage. When the threshold voltage is reached, a significant amount of current flows through the device and its Zener voltage remains stable against further increases in reverse voltage.
This device offers the advantages of low leakage and medium current capabilities with an optimized dynamic resistance. Its performance parameters are suitable for use in a range of applications including voltage regulation, noise control, and voltage switching. Additionally, its low cost has made it popular with low-cost consumer electronics.
On the operational level, the diode is designed to maintain a constant voltage in the presence of increasing reverse voltage. When reverse bias is applied across the diode, the electric field inside the device increases, overcoming the repulsive force between the charges. This allows current within the junction to increase exponentially.
The voltage at which avalanche breakdown occurs is known as the Zener voltage, and this voltage is stable and remains constant with increases in reverse voltage. This allows the diode to regulate the current and stabilize the voltage across it. The diode also acts to limit the amount of current that can flow through the device.
The RLZTE-1136C is designed specifically to offer greater dynamic resistance (DZ) than other single-breakdown diodes. As such, it protects the circuits to which it is connected from voltage spikes. Moreover, its small size makes it ideal for space-constrained applications such as mobile devices and IoT devices where size and weight constraints are paramount.
Another key feature of the RLZTE-1136C is its low leakage current. While all diodes leak current to some degree, the RLZTE-1136C keeps this to a minimum, allowing it to maintain its Zener voltage for an extended period of time. This is especially important for applications that require low environmental leakage, such as medical and military electronics.
Finally, the diode is also designed to be highly reliable. This is important in applications where safety is of paramount concern, such as industrial control systems and commercial lighting. The diode is also rated for multiple thermal cycle tests, ensuring that its performance is maintained over extended periods of time.
In summary, the RLZTE-1136C is a single-breakdown Zener diode designed for use in a variety of applications. Its low leakage current, medium current handling capabilities, optimized dynamic resistance and thermal cycling ratings make it an attractive solution for a wide range of applications. Its small size and low cost also make it an appealing option for consumer electronics and other space-constrained applications.
The specific data is subject to PDF, and the above content is for reference
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