| Allicdata Part #: | RN1109MFVL3F-ND |
| Manufacturer Part#: |
RN1109MFV,L3F |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Toshiba Semiconductor and Storage |
| Short Description: | TRANS PREBIAS NPN 50V 500NA VESM |
| More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
| DataSheet: |  RN1109MFV,L3F Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Transistor Type: | NPN - Pre-Biased |
| Current - Collector (Ic) (Max): | 100mA |
| Voltage - Collector Emitter Breakdown (Max): | 50V |
| Resistor - Base (R1): | 47 kOhms |
| Resistor - Emitter Base (R2): | 22 kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 70 @ 10mA, 5V |
| Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 5mA |
| Current - Collector Cutoff (Max): | 500nA |
| Power - Max: | 150mW |
| Mounting Type: | Surface Mount |
| Package / Case: | SOT-723 |
| Supplier Device Package: | VESM |
Description
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The RN1109MFV,L3F is a type of pre-biased transistor, more specifically classified as a single bipolar junction transistor (BJT). This type of transistor is capable of doing many tasks, including amplifying and switching electrical signals. In this article, we will explore the application field and working principle of the RN1109MFV,L3F.The RN1109MFV,L3F is a very versatile type of transistor. It is used in many different applications, ranging from automotive and industrial electronic systems to consumer electronic devices. It is also used in a wide variety of field-effect transistor (FET) based circuits, including motor control and LED lighting.The RN1109MFV,L3F is a pre-biased transistor, meaning that it is already set up for current flow when power is applied. This makes it a good choice for applications where it needs to switch between two or more states quickly and accurately. It is also useful for applications where a low noise, low power, and low voltage threshold is needed.The way in which the RN1109MFV,L3F works is relatively simple. When a voltage is applied to the base of the transistor, it opens up a channel that allows current to flow between the collector and emitter. This current flow can then be used to power or switch other components or circuits in the same device.The RN1109MFV,L3F can be used as an amplifier as well. When a voltage is applied to the base, it creates a difference in voltage between the collector and emitter, causing current to flow. This increases the current that flows from the collector to the emitter and allows for amplification of the signal.The RN1109MFV,L3F is a reliable transistor that is reliable for its purpose. It has a low breakdown voltage and can handle higher peak currents, making it ideal for applications that require a fast switching speed and low noise. It also has a wide temperature range and can withstand high-temperature operation, making it suitable for use in harsh environments.Overall, the RN1109MFV,L3F is a versatile single bipolar junction transistor that can be used in many different applications. It is pre-biased, meaning it already has the appropriate current flow set up when it is powered. It is also well suited for switching and amplifying applications, and can withstand a wide temperature range.
The specific data is subject to PDF, and the above content is for reference
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