Allicdata Part #: | RN142ZS8ATE61-ND |
Manufacturer Part#: |
RN142ZS8ATE61 |
Price: | $ 0.21 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | DIODE PIN HF SW 30V 50MA HMD8 |
More Detail: | RF Diode PIN - 4 Independent 30V 50mA 8-HMD (1.6x... |
DataSheet: | RN142ZS8ATE61 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.18818 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | PIN - 4 Independent |
Voltage - Peak Reverse (Max): | 30V |
Current - Max: | 50mA |
Capacitance @ Vr, F: | 0.45pF @ 1V, 1MHz |
Resistance @ If, F: | 1.5 Ohm @ 10mA, 100MHz |
Operating Temperature: | 150°C (TJ) |
Package / Case: | HMD8 |
Supplier Device Package: | 8-HMD (1.6x0.8) |
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RN142ZS8ATE61 is a diode that is as specifically designed for use in RF applications. This diode is a three-terminal or “tri-port” diode, meaning it has three terminals to enable its functionality. This diode is also known as a PIN diode, as it utilizes a p-type semiconductor material to create a highly efficient, low-level RF detection device. This specific type of device is advantageous in RF-rich environments because it is able to detect RF signals at very low frequencies in the range of 5kHz and up. It is also highly resistant to power cycling, meaning it can accept multiple power pulses in a single operation without the need to reset the diode. Finally, it has low capacitance of 25 picofarads (pF), making it suitable for use in RF circuits with high tolerances.
The RN142ZS8ATE61 operates by using an intrinsic Jensen effect to create an attenuation of the input signal. This attenuation is an electrical property of a junction within the internal structure of the diode - in this case, the semiconductor p-type material. This junction creates a “voltage controlled resistance” that is modulated by the input signal. This modulated resistance allows the diode to detect varying levels of RF power, while still providing robust attenuation in the off-state.
When an RF signal enters the diode, it creates a small change in current flow within the p-type material. This current change is then amplified within the diode and the output signal is used to control the electron flow through the diode. This electron flow is what causes the resistance of the diode to change, resulting in an attenuation of the input signal. This attenuation is then reflected back to the original source and eventually dissipates within the circuit.
The RN142ZS8ATE61 is a highly efficient attenuator of RF signals, making it ideal for use in a wide range of applications. It is used in mobile and satellite communications, vehicle tracking systems, and industrial automation. It is also used in medical and military applications, as it is highly resistant to power cycling and can handle multiple power pulses in a single operation. It can also be used in RF circuits that require low-level RF detection and high level attenuation of RF signals, such as in RF remote control systems.
The RN142ZS8ATE61 is an important device for those who work with RF systems. It can provide robust attenuation and low-level RF detection in RF-rich environments, making it an ideal choice for a wide range of applications. Its small size and low capacitance also make it highly suitable for use in RF circuits with high tolerances.
The specific data is subject to PDF, and the above content is for reference
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