RN1905(T5L,F,T) Allicdata Electronics
Allicdata Part #:

RN1905(T5LFT)TR-ND

Manufacturer Part#:

RN1905(T5L,F,T)

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: TRANS 2NPN PREBIAS 0.2W US6
More Detail: Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Bi...
DataSheet: RN1905(T5L,F,T) datasheetRN1905(T5L,F,T) Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6
Description

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The RN1905 (T5L,F,T) is an array of pre-biased transistors commonly used for both amplifier and switches for a variety of applications. It is especially known for its efficiency and low power consumption, even at high frequencies. The RN1905 is composed of five N-channel FETs (Field Effect Transistors), two PNP bipolar junction transistors, and one NPN bipolar junction transistor. The five FETs are integrated in a single package, allowing for a higher density design with improved performance.

A typical application for the RN1905 is in mobile device and computing electronics. In these applications, the RN1905 allows for continuous operation with low power and thermal efficiency. This efficiency is a result of multiple transistors sharing a single package, reducing delays and power consumption while increasing data throughput. The device is also widely used as a high-speed switch in communication circuits, such as Wi-Fi, cellular networks, and RFID systems, due to the reduced size and low power consumption.

The working principle of the RN1905 is based on a combination of N-channel and PNP transistors, which allow for efficient switching between the high and low power states, as well as low-level amplification. The PNP transistors operate as a type of amplifier, allowing for the signals to remain strong and undistorted. The N-channel FETs provide a low power state, preventing voltage and current fluctuations, while the NPN transistors ensure the transistors can only be switched between high and low states, thus preventing low-level signal noise or interference. The lower resistance of the N-channel-based transistors also lowers power consumption and increases the efficiency of the system, as well as improving signal quality, allowing for better and more reliable performance.

Overall, the RN1905 is an ideal choice for applications requiring high performance from a small form factor. The combination of the PNP and NPN transistors allow for a very efficient and power-saving system, while the N-channel FETs improve signal quality and decrease power consumption and delays. The RN1905 is especially suited for use in mobile device and computing electronics as it can provide continuous operation with low power usage for extended periods of time. Additionally, the device is widely used in communication and switch circuits due to its improved switching performance and low noise levels.

The specific data is subject to PDF, and the above content is for reference

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