RN1966FE(TE85L,F) Discrete Semiconductor Products

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The RN1966FE(TE85L,F) is an array of precision pre-biased transistors, which operate by the basic principles of bipolar junction transistors (BJT). BJTs are three-terminal devices that use the control of an electric field to affect current flow. BJTs have three main terminals, the base, collector and emitter, which form the active region of a transistor.

This pre-biased transistor array is designed to provide a wide range of voltage and current gains in a variety of applications. The RN1966FE(TE85L,F) can be used in high-voltage DC-to-AC switching applications, for example, for inductive loads and transformers. In electronics, BJT transistors are used in amplifiers and oscillators. They are also used in analog and digital integrated circuits.

A key feature of the RN1966FE(TE85L,F) is that it is a pre-biased device. This means that the array has already been fixed with an initial stable bias voltage before it is soldered in. The bias voltage is crucial in defining the transistor gain. It also helps to protect the transistor against reverse EMF stress, overvoltage, and power overloads.

The RN1966FE(TE85L,F) device is designed to operate over a wide range, from -55°C to +85°C. The device is designed to be applied in various current and load ranges, various signal processing circuits, and various controlling and interfacing applications. In particular, the device is especially suitable for signal conditioning applications, since its specified values of total dead-time and direction switch-off time are quite low.

To sum up, the RN1966FE(TE85L,F) is a high-performance, pre-biased array of bipolar junction transistors. It is specially designed for a wide range of high-voltage DC-to-AC switching, amplifier, oscillator, and analog and digital integrated circuits applications. Its wide temperature range and low dead-time and direction switch-off time make it a valuable choice for signal conditioning circuits.

The specific data is subject to PDF, and the above content is for reference