Allicdata Part #: | RSS105N03FU6TB-ND |
Manufacturer Part#: |
RSS105N03FU6TB |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET N-CH 30V 10.5A 8SOIC |
More Detail: | N-Channel 30V 10.5A (Ta) 2W (Ta) Surface Mount 8-S... |
DataSheet: | RSS105N03FU6TB Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 10.5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4V, 10V |
Rds On (Max) @ Id, Vgs: | 11.7 mOhm @ 10.5A, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 15nC @ 5V |
Vgs (Max): | 20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1130pF @ 10V |
FET Feature: | -- |
Power Dissipation (Max): | 2W (Ta) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-SOP |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
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The RSS105N03FU6TB is a Single N-Channel MOSFET that belongs to the FET family. It offers excellent performance for a wide range of applications, such as switching and power supply. This article will discuss the application field and working principle of the RSS105N03FU6TB.
The RSS105N03FU6TB is an N-Channel MOSFET and is designed to be used in applications such as DC/DC converters, automotive and industrial motors and industrial power supplies. It has a high thermal resistance and low on-resistance, and is suitable for use in high-speed switching applications. The MOSFET provides a low gate charge and excellent switching performance, enabling it to be used in circuits with high current and voltage stresses. Because of its high current density and low gate charge, the RSS105N03FU6TB is ideal for applications where power efficiency is paramount.
The MOSFET also has a high input capacitance and a short propagation delay, making it suitable for high-speed switching and logic applications. In addition to these features, the MOSFET also has an impressive power handling capability, which allows it to be used in high power applications. Overall, with its excellent performance in a variety of applications, the RSS105N03FU6TB is an ideal choice for many applications.
To understand how the RSS105N03FU6TB works, it is important to first understand the principles of FETs, or field effect transistors. FETs are electrically controlled devices, which circulate current through the device when the voltage across the device is changed. The current is passed through a channel, which can be controlled by a gate. This gate can be used to open and close the channel, allowing or preventing current from passing between the two terminals. When the gate voltage is increased, the channel is opened and current is allowed to flow. The RSS105N03FU6TB is a single N-Channel MOSFET, meaning that the direction of current flow is controlled by the gate voltage.
The advantage of the MOSFET is that it is capable of very low on-resistance, allowing for higher power efficiency and less heat generation. In addition, the MOSFET can handle large amounts of power, making it ideal for high power applications. Furthermore, due to its high thermal resistance, the MOSFET can be used in high-speed applications without the risk of the device overheating. It also offers a low gate charge and excellent switching performance, making it a great choice for circuits which require rapid response times.
Overall, the RSS105N03FU6TB is a great choice for a variety of applications. It offers a low on-resistance, high power handling capabilities, and excellent switching performance. These features, combined with its low gate charge and high thermal resistance, make it ideal for use in high current and voltage stressed circuits, as well as for high-speed switching and logic applications. With its wide range of applications and impressive performance, the RSS105N03FU6TB is an excellent choice for use in many applications.
The specific data is subject to PDF, and the above content is for reference
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