RUM001L02T2CL Discrete Semiconductor Products

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RUM001L02T2CL is a N-Channel enhancement mode MOSFET from Toshiba. It is a 2.0mm x 2.3mm (ultra-small) miniature top-gate transistor designed for miniaturization of mobile and other digital applications. The low on-state resistance (RDS(ON)) of 40 mOhm and excellent maximum drain current of 45A makes it suitable for high current applications. It features a very low operating temperature of -40℃ to +85℃ and thus can be used in a variety of temperature sensitive applications. The excellent switching characteristics makes it ideal for use in digitally switching circuits.

RUM001L02T2CL is based on a depletion mode transistor operation, where the electric field created by the gate junction is used to turn the transistor on or off. When the gate voltage is low, the conduction of electrons through the transistor is reduced, resulting in a decrease in drain current (Idr) and an increase in on-state resistance (RDS(ON)). Conversely, when the gate voltage is high, the conduction of electrons through the transistor increases, resulting in an increase in drain current and a decrease in on-state resistance. This depletion mode operation allows for accurate current control over a wide range of gate voltage levels. The gate voltage is typically controlled by an external control signal and is used to drive current to the output of the device.

RUM001L02T2CL is optimized for use in a variety of digital and analog applications, including DC-DC converters, switch mode power supplies, RF wireless communications, motor control, solid-state lighting, and automotive applications. Since the device has a very low on-state resistance, it can be used to switch high currents with minimal loss of power. It can also be used in low voltage circuits as long as the drain and source terminals are connected properly. The excellent switching speeds of the device make it suitable for applications requiring high switching speeds.

RUM001L02T2CL is a small and versatile MOSFET that is suitable for use in many miniaturized applications. Its low on-state resistance and excellent switching characteristics makes it ideal for current control and fast switching applications. The device’s wide operating temperature range and low power dissipation enables its use in temperature sensitive applications. It is an excellent choice for miniature digital and analog applications where miniaturization is important.

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