S25FL164K0XMFBQ13 Allicdata Electronics
Allicdata Part #:

S25FL164K0XMFBQ13-ND

Manufacturer Part#:

S25FL164K0XMFBQ13

Price: $ 1.65
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC FLASH 64M SPI 108MHZ 8SO
More Detail: FLASH - NOR Memory IC 64Mb (8M x 8) SPI - Quad I/O...
DataSheet: S25FL164K0XMFBQ13 datasheetS25FL164K0XMFBQ13 Datasheet/PDF
Quantity: 1000
2100 +: $ 1.49861
Stock 1000Can Ship Immediately
$ 1.65
Specifications
Series: Automotive, AEC-Q100, FL1-K
Packaging: Tape & Reel (TR) 
Part Status: Last Time Buy
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 64Mb (8M x 8)
Clock Frequency: 108MHz
Write Cycle Time - Word, Page: 3ms
Memory Interface: SPI - Quad I/O
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Supplier Device Package: 8-SO
Description

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S25FL164K0XMFBQ13 is a non-volatile memory chip (NVM) developed to meet market demand for small-size, high-performance, high-reliability memory devices. It is a stacked 64M-cell multi-level single-chip Flash memory, with the industry-standard TSOP48 package.

The S25FL164K0XMFBQ13 is a high-speed memory device with a maximum read speed of up to 50MHz and a maximum write speed of up to 30MHz. It has an array of independent 64M-cell blocks, which can be read independently or jointly at high speed using a command set that includes multiple read commands.

The device packs a lot of features into a smaller package, which makes it an ideal solution for embedded applications, such as point-of-sale terminals, industrial and consumer controls, medical systems, and networking systems. It is suited for applications requiring parallel programming and sector-erase, as well as fast data transmission and various other operations.

The S25FL164K0XMFBQ13 works on the principle of electrical stress. This procedure, called "program and erase" or "P/E," is initiated by injecting electrons through an insulated oxide layer into the cells, usually for programming. Then, to erase the memory, electrons need to be drawn, again through an insulated oxide layer, from the cells.

Due to the use of an insulated gate, the S25FL164K0XMFBQ13 offers a much longer data retention time compared to other non-volatile memories, and the device can guarantee that the data stored in memory can remain the same for up to ten years. The chip also offers a high endurance capability of up to 100,000 erase/program cycles, which makes it ideal for replacing Electrically Erasable Programmable Read-Only Memory (EEPROM).

The S25FL164K0XMFBQ13 memory chip offers outstanding performance and advanced features for embedded systems applications. It has a low power standby current, which results in high power efficiency, and it also supports multiple operations, such as write, read, program, and erase. In addition, it has an advanced internal refresh function that guarantees data retention for up to ten years. With these features, the S25FL164K0XMFBQ13 is the perfect solution for applications in industrial, consumer and medical markets.

The specific data is subject to PDF, and the above content is for reference

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