S26KL512SDABHI030

Series:	HyperFlash™ KL
Packaging:	Tray
Part Status:	Active
Memory Type:	Non-Volatile
Memory Format:	FLASH
Technology:	FLASH - NOR
Memory Size:	512Mb (64M x 8)
Clock Frequency:	100MHz
Write Cycle Time - Word, Page:	--
Access Time:	96ns
Memory Interface:	Parallel
Voltage - Supply:	2.7 V ~ 3.6 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	24-VBGA
Supplier Device Package:	24-FBGA (6x8)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction

S26KL512SDABHI030 is a high-performance, low-power 512 megabit (Mb) static random access memory (SRAM) which is most suitable for embedded memory applications, especially in industrial and consumer applications. It is a cost-effective solution providing a combination of high capacity and access time performance with low cost. This article will discuss the application field and working principle of S26KL512SDABHI030 memory, and introduce its advanced features that improve system performance and reduce power consumption.

Application Field

S26KL512SDABHI030 is ideally suited for embedded applications requiring low power and more memory density, including industrial control, telecom, communication and consumer applications. Typical applications for this memory include controller functions that require high-speed data exchange and require significant memory storage. As a 512 Megabit memory device, it can provide high-density storage of program instructions and data and is particularly suited for computationally intense applications in industrial control systems and consumer electronics. The S26KL512SDABHI030 can provide rapid access time and low power consumption in a small package, with the lowest bit consumption per byte at 6:1. This memory device is specifically designed for those applications that require a high-speed and low-power embedded access. The device has an operating temperature range of 40°C to +85°C, making it well-suited for industrial and consumer applications.

Working Principle

The S26KL512SDABHI030 memory device operates on the principle of a static RAM. This type of device is characterized by being able to store data and information that it can immediately access, without any need to access it from another source or wait for it to be retrieved from memory. This device uses a method of keeping data and instructions stored within an internal array of transistors and capacitors, which allows them to maintain the data in a stable manner. When a user needs to access data, the internal address lines and data lines form a series of buses along which the relevant information travels and memories the contents of the address they specify. The address, data and control signals are all sent to the device through a single port, making it easier to control the device and access its contents quickly.The S26KL512SDABHI030 device is equipped with three technology features that reduce power consumption and improve system performance. The first is active power management circuitry, which provides more specific power management for each memory block. This feature allows for longer battery life and overall better system performance. The second is a low-standby current mode, which allows the device to enter a low current state when idle, saving additional power. Finally, the device features an Advanced High Density read architecture, which enables faster read operations on the entire device.

Conclusion

The S26KL512SDABHI030 combines high performance and low power consumption, making it an ideal solution for cost-sensitive embedded applications. The device can provide rapid access time and low power consumption in a small package, and its advanced features such as active power management, low-standby current mode, and Advanced High Density read architecture all improve system performance and reduce power consumption.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description