S29GL032N90BFI033

Series:	GL-N
Packaging:	Tape & Reel (TR)
Part Status:	Active
Memory Type:	Non-Volatile
Memory Format:	FLASH
Technology:	FLASH - NOR
Memory Size:	32Mb (4M x 8, 2M x 16)
Write Cycle Time - Word, Page:	90ns
Access Time:	90ns
Memory Interface:	Parallel
Voltage - Supply:	2.7 V ~ 3.6 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	48-VFBGA
Supplier Device Package:	48-FBGA (8.15x6.15)

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Memory: S29GL032N90BFI033

S29GL032N90BFI033 is an eight gigabit (8Gb) single 1.8 V source memory device, combining an 8 million word of 32-bit wide, 8-bit deep static random access memory (SRAM) array with a high-performance erase/program controller. This device is a member of the Spansion 4-Kb sector family and provides a fully programmable sector DataOr Status.The S29GL032N90BFI033 device integrates the common memory functions of SRAM devices, such as, endurance and data retention, with additional features that provide enhanced performance and flexibility.The S29GL032N90BFI033 device is offered in two packages—the 8-pin SOIC and 8-pin SON packages. The S29GL032N90BFI033 device operates on a single 1.8 V supplies. The device achieves extremely low current consumption through the use of an efficient operating scheme.

Application Field

The S29GL032N90BFI033 device is designed for high-performance, low-cost systems that must access and manipulate large amounts of data in a short period of time, such as telecom/networking systems, embedded and control systems, e-commerce and storage systems.Examples of applications that benefit from the S29GL032N90BFI033 device include: 1. Network and communications systems, such as routers, switches, base stations and gateways.2. Medical systems and devices, such as insulin pumps and medical imaging systems.3. Automation equipment, such as programmable logic controllers, robots and industrial controllers.4. Embedded systems, such as industrial and test/measurement systems.5. Industrial automation systems, such as smart manufacturing and process control systems.

Working Principle

The S29GL032N90BFI033 device has two operating modes: burst access and page mode. In burst mode, the device can access successive data words in a row and can be programmed to a single 1.8 V supply voltage, allowing it to access all of its internal registers.In page mode, the device increases the internal clock frequency and allows the device to access four successive data words, which are stored in the data FIFO registers. The device is programmed to access a particular sector and addresses within each sector.The internal registers of the S29GL032N90BFI033 device allow the device to monitor its internal status and operations. The registers also provide support for sector address translation and end of sector sector write-back data.The S29GL032N90BFI033 device supports the fast and convenient programming of data words. Each sector can be programmed at a time and each sector can store up to eight million words. Additionally, sector programming can be done in page mode, allowing for faster and more efficient programming.The device supports a wide range of ECC options, making it suitable for applications requiring high data accuracy. The device is also available with error correction code (ECC) support to help detect and correct errors in stored data.To further improve system performance, the S29GL032N90BFI033 device supports multiple boot support, allowing code to be stored in multiple sectors and executed independently. The device also supports multiple program and erase commands, as well as an erase suspend/resume mode.Finally, the device integrates a high-performance erase/program controller that is independent of the SRAM array and handles the erase/program operations of the device while the chip can continue to operate in other modes. This ensures high device reliability and extended lifetime.

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