S30ML512P50TFI510 Integrated Circuits (ICs)

Series:	*
Part Status:	Obsolete

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Introduction: S30ML512P50TFI510 is a memory device with a capacity of 512 megabytes. It is a type of DRAM and is used to store data. It is primarily used in embedded and industrial applications, due to its combination of relatively high performance, small physical size and low power consumption compared to other types of memory devices. Applications of S30ML512P50TFI510: The S30ML512P50TFI510 memory device is commonly used in embedded and industrial applications due to its performance, smaller physical size, and low power consumption. Examples of applications where it is used include flight control and navigation systems, security equipment, vehicle diagnostics, communications networks, industrial automation, machine vision systems, medical imaging equipment, and embedded industrial platforms.The combination of these features makes the S30ML512P50TFI510 memory device ideal for use in applications with stringent power requirements, as well as in applications where data integrity is essential. Technical Specifications of S30ML512P50TFI510: The S30ML512P50TFI510 memory device is a 64Mbit memory device that uses a 512Mbit memory array and operates at a frequency of 50MHz. It has a data bus width of 16 bits and can transfer data at a rate of 50MHz. The total capacity of the device is 512 megabytes and it supports page mode access for fast page-to-page data transfers. In addition, it supports error correction code (ECC) to ensure data integrity. Working Principle of S30ML512P50TFI510: The primary purpose of the S30ML512P50TFI510 memory device is to store and retrieve data. Data is stored in the device’s memory cells, which are arranged in a 512 megabyte memory array. Data is read from and written to the device through a data bus. The data bus is controlled by a control signal, which is generated by the device’s control logic. The control logic manages the transfer of data between the device’s memory array and the external system. The device supports page mode access, which allows for fast page-to-page data transfers. For example, when a page of data is read from the device, a new page of data can be read from the device without having to wait for the previous page of data to be transferred. This allows for faster data transfers and improves overall performance. In addition, the S30ML512P50TFI510 memory device supports error correction code (ECC). ECC is a type of error-detection technique that is used to ensure the accuracy and reliability of data stored in the device’s memory cells. ECC can detect and correct certain types of errors, such as single-bit errors, which helps to ensure the integrity of data stored in the device. Conclusion: The S30ML512P50TFI510 memory device is a type of DRAM that is used to store data in embedded and industrial applications. It offers relatively high performance, a small physical size, and low power consumption compared to other types of memory devices. The device has a data bus width of 16 bits, a total capacity of 512 megabytes, and supports page mode access and error correction code (ECC). These features make the S30ML512P50TFI510 memory device ideal for use in applications with stringent power requirements, as well as in applications where data integrity is essential.

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