S34ML04G100TFI003 Allicdata Electronics
Allicdata Part #:

S34ML04G100TFI003-ND

Manufacturer Part#:

S34ML04G100TFI003

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC FLASH 4G PARALLEL 48TSOP I
More Detail: FLASH - NAND Memory IC 4Gb (512M x 8) Parallel 4...
DataSheet: S34ML04G100TFI003 datasheetS34ML04G100TFI003 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: ML-1
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 4Gb (512M x 8)
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP I
Description

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S34ML04G100TFI003 is a specific type of memory embedded in devices, usually used for memory storage. It is compact in size, lightweight, and durable. It is also resistant to temperature and offers wide temperature operation ranges.

S34ML04G100TFI003 embedded memory has several distinctive features, one of the most important being its high density. It is capable of storing much more data than typical RAM or ROM and utilizes a non-volatile memory design. This non-volatile memory is not affected by a system power failure, which helps in keeping data safe even if there is a sudden power loss or outage. Additionally, they have improved energy efficiency, making them more energy-efficient than traditional memories.

The applications of S34ML04G100TFI003 embedded memory are diverse. It can be used in a variety of consumer electronics and in many industrial applications, such as automotive, medical, aerospace, industrial control, and more. Computers, smartphones, and tablets utilize this type of memory for memory storage.

The working principle of S34ML04G100TFI003 memory is similar to other types of embedded memories. It is composed of a controller, several registers, and large-capacity, non-volatile memory. Data is written to and read from the memory cells through the registers, which are triggered by a controller. The controller is responsible for managing the memory and sending and receiving information to the registers.

The controller is programmed to have specific instructions on what to do and when. This is done by setting different registers and deciding which instruction set to use. The controller can also be programmed to recognize commands such as read, write, and write/erase, depending on the type of memory being used.

The structure of S34ML04G100TFI003 memory allows for a much higher density than other types of embedded memories. This increased density is achieved by using a Multi-Level Cell (MLC) architecture. The MLC architecture allows for more bits of data to be stored in a single cell, enabling it to offer more efficient memory usage.

The combination of a controller, registers, and non-volatile memory make S34ML04G100TFI003 embedded memory ideal for efficient, high-capacity data storage. Its ability to offer more efficient memory usage and its ability to store much more data than conventional RAM or ROM make it an attractive choice for a variety of applications, including medical, industrial control, automotive, and aerospace.

The specific data is subject to PDF, and the above content is for reference

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