Allicdata Part #: | 1259-1108-ND |
Manufacturer Part#: |
SG2013J-883B |
Price: | $ 52.60 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | TRANS 7NPN DARL 50V 0.6A 16JDIP |
More Detail: | Bipolar (BJT) Transistor Array 7 NPN Darlington 50... |
DataSheet: | SG2013J-883B Datasheet/PDF |
Quantity: | 5 |
1 +: | $ 47.81700 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
Transistor Type: | 7 NPN Darlington |
Current - Collector (Ic) (Max): | 600mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Vce Saturation (Max) @ Ib, Ic: | 1.9V @ 600µA, 500mA |
Current - Collector Cutoff (Max): | -- |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 900 @ 500mA, 2V |
Power - Max: | -- |
Frequency - Transition: | -- |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | -- |
Supplier Device Package: | 16-CDIP |
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SG2013J-883B, a bipolar junction transistor (BJT) array, is a kind of three-layered semiconductor device, commonly used in amplification, switching and signal processing. It is designed to amplify small signals in medium power applications and is well-suited for a wide range of analog circuits.
This BJT array contains a pair of NPN transistors with thermal protection. The two transistors are similar, except for the gate connections. On the sides of the device, there are two small holes for external connections. Each of these transistors have independent pins, allowing for independent control of each element in the array.
The SG2013J-883B is made up of two NPN silicon transistors. Its power dissipation is up to 2 W, and its collector-emitter saturation voltage is 0.6 V. The device has a wide current gain bandwidth product of 1 MHz, allowing it to adequately perform up to 1 MHz in medium-power applications. The device\'s high gain ensures that it is suitable for both digital and analog circuits, making it a versatile analog component.
In terms of its working principle, this BJT array consists of two NPN transistors placed in a common collector configuration and connected in parallel. When a base current enters the structure, it is split into two equal parts, one for each transistor. When the base current reaches a certain level, the two transistor cells start to conduct, producing two amplified collector currents. These two currents are in antiphase, which means one current is positive, while the other is negative. This current can then be used to drive the load.
The SG2013J-883B can be used in many applications due to its wide range of frequency operation and its low power dissipation. Commonly, it can be used in differential amplifiers, operational amplifiers, gain cells, gate drivers, power supplies, and switched-mode power supplies. It is also suitable for driving TTL and CMOS logic, and is often used for small-signal boosting and expansion.
The SG2013J-883B BJT array is a reliable and versatile component which can be used in a multitude of analog applications. Its thermal protection, wide current gain bandwidth, and high gain all make it well-suited for use in digital and analog circuits. This device is widely popular among designers and engineers, making it one of the most widely used devices in the field.
The specific data is subject to PDF, and the above content is for reference
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