SGP10N60RUFDTU Allicdata Electronics
Allicdata Part #:

SGP10N60RUFDTUFS-ND

Manufacturer Part#:

SGP10N60RUFDTU

Price: $ 1.42
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: IGBT 600V 16A 75W TO220
More Detail: IGBT 600V 16A 75W Through Hole TO-220-3
DataSheet: SGP10N60RUFDTU datasheetSGP10N60RUFDTU Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
1 +: $ 1.29150
10 +: $ 1.16298
100 +: $ 0.93461
500 +: $ 0.76786
1000 +: $ 0.63622
Stock 1000Can Ship Immediately
$ 1.42
Specifications
Switching Energy: 141µJ (on), 215µJ (off)
Base Part Number: SG*10N60
Supplier Device Package: TO-220-3
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Reverse Recovery Time (trr): 60ns
Test Condition: 300V, 10A, 20 Ohm, 15V
Td (on/off) @ 25°C: 15ns/36ns
Gate Charge: 30nC
Input Type: Standard
Series: --
Power - Max: 75W
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 10A
Current - Collector Pulsed (Icm): 30A
Current - Collector (Ic) (Max): 16A
Voltage - Collector Emitter Breakdown (Max): 600V
IGBT Type: --
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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Introduction

SGP10N60RUFDTU is an enhancement-mode lateral field effect transistor (FET). It is a single-package IGBT (insulated gate bipolar transistor), which utilizes an isolated gate electrode to provide superior switching characteristics and lower conduction losses over the more traditional bipolar transistors. The SGP10N60RUFDTU is intended for various applications in switched-mode power supplies, motor control and other power switching circuits.

Application Fields

The SGP10N60RUFDTU is designed for use in power switching circuits, including switches for AC switching, motor drives, SMPS/DC-DC converters, home appliances and lighting controls. It is also suitable for low level switching and inverter applications, where its higher efficiency, fast switching and no-reverse recovery capability make it a cost-effective solution.

The SGP10N60RUFDTU’s lower on-state conduction losses and shorter switching times make it suitable for a range of switching applications, including switchmode power supplies and motor drives. It’s increased efficiency can also reduce system cost, making it the ideal choice for applications such as solar photovoltaics and wind energy.

Working Principle

The SGP10N60RUFDTU utilizes an isolated gate electrode to provide superior switching characteristics and lower conduction losses compared to other transistors. When the gate electrode is charged, the transistor turns on and a current can flow through it. When the gate voltage is reversed, the transistor switches off quickly and no reverse recovery is required. This fast switching time allows for improved system performance. Its lower on-state conduction losses result in greater efficiency than the traditional bipolar transistor.

The SGP10N60RUFDTU also features no breakover behavior, meaning that the output will remain off if the gate voltage remains below the positive threshold. This ensures that the transistor behaves reliably, even when transient voltage spikes are applied.

Conclusion

The SGP10N60RUFDTU IGBT is well suited to a variety of applications requiring fast switching and efficient power transfer. Its short switching times and lower conduction losses make it an ideal choice for applications such as switched-mode power supplies and motor control. Additionally, its isolated gate electrode ensures reliable operation in noisy environments, making it an excellent choice for applications requiring long-term performance.

The specific data is subject to PDF, and the above content is for reference

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