Allicdata Part #: | SGP10N60RUFDTUFS-ND |
Manufacturer Part#: |
SGP10N60RUFDTU |
Price: | $ 1.42 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | IGBT 600V 16A 75W TO220 |
More Detail: | IGBT 600V 16A 75W Through Hole TO-220-3 |
DataSheet: | SGP10N60RUFDTU Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
1 +: | $ 1.29150 |
10 +: | $ 1.16298 |
100 +: | $ 0.93461 |
500 +: | $ 0.76786 |
1000 +: | $ 0.63622 |
Switching Energy: | 141µJ (on), 215µJ (off) |
Base Part Number: | SG*10N60 |
Supplier Device Package: | TO-220-3 |
Package / Case: | TO-220-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Reverse Recovery Time (trr): | 60ns |
Test Condition: | 300V, 10A, 20 Ohm, 15V |
Td (on/off) @ 25°C: | 15ns/36ns |
Gate Charge: | 30nC |
Input Type: | Standard |
Series: | -- |
Power - Max: | 75W |
Vce(on) (Max) @ Vge, Ic: | 2.8V @ 15V, 10A |
Current - Collector Pulsed (Icm): | 30A |
Current - Collector (Ic) (Max): | 16A |
Voltage - Collector Emitter Breakdown (Max): | 600V |
IGBT Type: | -- |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tube |
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Introduction
SGP10N60RUFDTU is an enhancement-mode lateral field effect transistor (FET). It is a single-package IGBT (insulated gate bipolar transistor), which utilizes an isolated gate electrode to provide superior switching characteristics and lower conduction losses over the more traditional bipolar transistors. The SGP10N60RUFDTU is intended for various applications in switched-mode power supplies, motor control and other power switching circuits.
Application Fields
The SGP10N60RUFDTU is designed for use in power switching circuits, including switches for AC switching, motor drives, SMPS/DC-DC converters, home appliances and lighting controls. It is also suitable for low level switching and inverter applications, where its higher efficiency, fast switching and no-reverse recovery capability make it a cost-effective solution.
The SGP10N60RUFDTU’s lower on-state conduction losses and shorter switching times make it suitable for a range of switching applications, including switchmode power supplies and motor drives. It’s increased efficiency can also reduce system cost, making it the ideal choice for applications such as solar photovoltaics and wind energy.
Working Principle
The SGP10N60RUFDTU utilizes an isolated gate electrode to provide superior switching characteristics and lower conduction losses compared to other transistors. When the gate electrode is charged, the transistor turns on and a current can flow through it. When the gate voltage is reversed, the transistor switches off quickly and no reverse recovery is required. This fast switching time allows for improved system performance. Its lower on-state conduction losses result in greater efficiency than the traditional bipolar transistor.
The SGP10N60RUFDTU also features no breakover behavior, meaning that the output will remain off if the gate voltage remains below the positive threshold. This ensures that the transistor behaves reliably, even when transient voltage spikes are applied.
Conclusion
The SGP10N60RUFDTU IGBT is well suited to a variety of applications requiring fast switching and efficient power transfer. Its short switching times and lower conduction losses make it an ideal choice for applications such as switched-mode power supplies and motor control. Additionally, its isolated gate electrode ensures reliable operation in noisy environments, making it an excellent choice for applications requiring long-term performance.
The specific data is subject to PDF, and the above content is for reference
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