SI4010DY-T1-GE3 Discrete Semiconductor Products

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The SI4010DY-T1-GE3 is a high-performance power MOSFET with excellent switching characteristics and low total gate charge. It is often used in high-voltage, high-speed switching applications, such as power management and digital power switching. This MOSFET is part of the Infineon OptiMOS family that provides industry-leading performance in terms of power density, efficiency and low switching losses. This device is a single, high-voltage and high-current level shift MOSFET.

The SI4010DY-T1-GE3 utilizes a single N-channel through hole package that consists of a bonding plate, two solder-filled hole sections, and a metal metal-filled hole section. It is well suited for through hole applications, such as HVAC/R, pulse power, DC-DC converters, and for automotive purposes. It can also be used for general-purpose applications, such as power supplies, power converters, UPS systems, and converters.

The main working principle of the SI4010DY-T1-GE3 is to turn on and off electrical current passing through its source and drain terminals. When a positive voltage difference is applied between the gate and source of the MOSFET, the current will flow from the source to the drain. The MOSFET remains in the on-state until the voltage potential across the gate is changed back to zero to turn off the device. This MOSFET also features a built-in level shifter circuit which allows the device to function as a voltage-sensitive switch.

The SI4010DY-T1-GE3 offers excellent on-state resistance, excellent power handling, high-speed switching, superior thermal performance, and a low gate charge. It is an ideal choice for applications where low gate charge, fast switching speeds, and low total power dissipation are required. The device’s thermal performance is also quite good, with a junction-to-ambient thermal resistance of approximately 59.5°C/W. This makes it well-suited for thermal-sensitive applications.

The SI4010DY-T1-GE3 is also a highly reliable device, featuring an operating temperature range of -55°C to +150°C and an ESD rating of 2KV. This device is tested and certified to UL1414 with a lifetime of up to 1 million hours. It is also RoHS compliant and meets the requirements of EC1101 and EN13001. All these features combine to make the SI4010DY-T1-GE3 one of the most reliable and versatile high-voltage MOSFETs available.

The SI4010DY-T1-GE3 can be used in a variety of applications, including high-voltage, pulse-width modulation power conversion, DC power switching, DC-DC conversion, ups systems, smart grid technologies, electronic motor control, and automotive power conditioning. It is also suitable for power management in industrial and consumer electronic products, as well as in renewable energy applications. This device is particularly well-suited for solar inverter, battery charging, and other renewable energy applications.

In summary, the SI4010DY-T1-GE3 is a high-performance power MOSFET that offers excellent switching characteristics, low total gate charge, and high current and voltage rating. It is an ideal choice for a variety of applications, ranging from high-power conversion, DC-DC conversion, and power management, to automotive, industrial, and renewable energy applications. Its built-in level shifter, superior thermal performance, ESD protection, and high reliability make it one of the best options for power applications.

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