SI4396DY-T1-GE3 Discrete Semiconductor Products

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The SI4396DY-T1-GE3 is a high-performance N-channel enhancement-mode field-effect transistor. It is a low-cost device with fast switching properties suitable for a wide range of applications. This device is available in the T1 package which is a three-terminal single-ended P-Channel MOSFET.

The SI4396DY-T1-GE3 has a pinch-off voltage of 4.5V. This device has low drain-source RDS(on) (7.5mΩ @VGS=4.5V). It features a low threshold voltage (Vth) of -3.3V and high transconductance (gm = 723μS).This device is built to be able to withstand high temperatures with a maximum junction temperature of 175°C.

The SI4396DY-T1-GE3 is designed to be used in a wide range of applications. It can be used in power management, power supplies, motor control, AC/DC converters, load switching and DC/DC converters. Its fast switching speeds make it ideal for power converters and motor control applications.

The working principle of the SI4396DY-T1-GE3 involves three electrodes. These electrodes are the source, gate, and drain. The source is connected to the negative voltage, the gate is the control electrode, and the drain can be connected to the positive voltage. The gate and the source potential must be in equilibrium for the transistor to remain in the off-state. When the gate potential is increased, the electrons in the substrate begin to flow from the source to the drain. The current flow is controlled by the gate voltage. This allows for fast switching when the gate and the drain potential are cross-referenced.

The SI4396DY-T1-GE3 is especially suited for low-frequency switching applications. Due to its low on-resistance and operating temperature range, it is also well-suited for high-power, low-frequency switching applications. The maximum drain source voltage and peak drain current make it an ideal choice for applications that require high power but need to remain small in size. This makes the SI4396DY-T1-GE3 a great choice for many small form factor applications.

The SI4396DY-T1-GE3 is an excellent device for a wide range of applications. Its small package size, fast switching speed, and low on-resistance make it a great choice for many power management and low-frequency switching applications. Its ability to withstand high temperatures and provide a high peak drain current makes it ideal for small form factor applications. This device is designed to provide fast switching speeds, low drain source RDS(on), and a low threshold voltage which all make it a great choice for many applications.

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