SI4500BDY-T1-E3 Allicdata Electronics
Allicdata Part #:

SI4500BDY-T1-E3CT-ND

Manufacturer Part#:

SI4500BDY-T1-E3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N/P-CH 20V 6.6A 8SOIC
More Detail: Mosfet Array N and P-Channel, Common Drain 20V 6.6...
DataSheet: SI4500BDY-T1-E3 datasheetSI4500BDY-T1-E3 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Base Part Number: SI4500
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.3W
Input Capacitance (Ciss) (Max) @ Vds: --
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 20 mOhm @ 9.1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6.6A, 3.8A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: N and P-Channel, Common Drain
Part Status: Obsolete
Packaging: Cut Tape (CT) 
Description

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The SI4500BDY-T1-E3 is a type of transistor array that is commonly used in various electronic circuits, especially those used for switching low-voltage and high-drain operations. This series of transistors is developed by the manufacturer, Infineon Technologies, and is a part of a wider family of electronic components that is used for a wide range of applications, from audio control to motor control.

The SI4500BDY-T1-E3 is a complex transistor array that is designed to be used in applications where high performance, low power, and high reliability are important. The device consists of four independent transistors that can be used individually or as an array. In combination, these four transistors can provide a maximum output power of up to 150mA. The device also includes a voltage clamping circuit that provides protection against overvoltage and current surges.

The SI4500BDY-T1-E3 is an ideal choice for applications that require both low-voltage and high-current operations, such as motor control or audio control. The device has several advantages over other types of transistors, including low power consumption, high performance, and high reliability. Additionally, the device is designed to be easily integrated into existing circuits and requires little additional hardware to make it work.

The SI4500BDY-T1-E3 works by controlling the voltage applied to the gates of the transistors in the array. By adjusting the gate voltage, the current flowing through the device can be adjusted, allowing it to be used for switching and controlling various types of circuits. In addition, the device can be used to control the speed of a motor, as the voltage applied to the gates can be adjusted to control the motor speed.

The SI4500BDY-T1-E3 is a highly reliable device that provides high performance and low power consumption. The device has a wide operating temperature range and can operate at temperatures of up to 125°C. Additionally, the device has a range of built in protection features, such as ESD protection and a power clamping circuit, that help to protect the device from damage due to unexpected power surges.

Overall, the SI4500BDY-T1-E3 is an ideal choice for applications where high performance, low power consumption, and high reliability are important. The device provides an efficient and reliable solution for a wide range of applications, making it a popular choice for many electronic circuits that require switching and controlling operations. Additionally, the device is easy to integrate into existing circuits, requiring little additional hardware to make it work.

The specific data is subject to PDF, and the above content is for reference

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