Allicdata Part #: | SI6928DQ-T1-GE3TR-ND |
Manufacturer Part#: |
SI6928DQ-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET 2N-CH 30V 4A 8-TSSOP |
More Detail: | Mosfet Array 2 N-Channel (Dual) 30V 4A 1W Surface ... |
DataSheet: | SI6928DQ-T1-GE3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Base Part Number: | SI6928 |
Supplier Device Package: | 8-TSSOP |
Package / Case: | 8-TSSOP (0.173", 4.40mm Width) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power - Max: | 1W |
Input Capacitance (Ciss) (Max) @ Vds: | -- |
Gate Charge (Qg) (Max) @ Vgs: | 14nC @ 5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 35 mOhm @ 4A, 10V |
Current - Continuous Drain (Id) @ 25°C: | 4A |
Drain to Source Voltage (Vdss): | 30V |
FET Feature: | Logic Level Gate |
FET Type: | 2 N-Channel (Dual) |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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SI6928DQ-T1-GE3 Application and Working Principle
The SI6928DQ-T1-GE3 is a series of transistors designed to offer high-performance signal switching and low on-state Vm. This series has been extensively tested and optimized at the die level to ensure superior performance and superior product quality. This series of transistors is available in a range of sizes and package types, making it suitable for a variety of applications.
Features
- Low Drain-to-Source On-state Voltage
- Low Gate Threshold Voltage
- High Reverse Transfer Capacitance
- High Output Power
- High Frequency Operation
- Low Cost
Application
This series of transistors is commonly used for various switching applications in communications, audio, video, medical, automotive and computer systems. For example, applications like power supplies and high-speed switching can benefit from the low on-state voltage and high drain current characteristic of the SI6928DQ-T1-GE3 series. This series can also be used in motor control driver stages, where its low noise and high-speed switching performance make it a suitable choice.
Working Principle
The SI6928DQ-T1-GE3 series is a series of transistors built using MOSFET technology. In basic terms, a MOSFET transistor is composed of a metal-oxide-semiconductor field-effect-transistor (MOSFET). The key components of a MOSFET are a gate, a source, and a drain. The gate is the control element of a MOSFET and acts as an insulator that allows or disallows current flow. Applied potentials are applied between the gate and the source, and the gate voltage determines the current through the drain. When the gate voltage is greater than the source potential, the transistor is said to be in an "on" state, which allows current to flow through the drain.
The SI6928DQ-T1-GE3 series of transistors incorporates a low gate threshold voltage, which reduces the input voltage requirement for turning the device on. This allows the transistor to be driven with lower supply voltages, and makes it suitable for low-voltage applications. Additionally, the high drain current ensures high-speed switching, allowing for faster signal throughput.
Conclusion
The SI6928DQ-T1-GE3 series of transistors is an excellent option for low-cost, high-performance switching applications. The low on-state Vm and gate threshold voltages offer excellent performance in a range of applications, and the high output power capabilities make it a suitable choice for applications that require high speed switching. For communication, video, and audio applications, the SI6928DQ-T1-GE3 series offers an excellent combination of performance and cost.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
SI6924AEDQ-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2N-CH 28V 4.1A 8-T... |
SI6925ADQ-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2N-CH 20V 3.3A 8TS... |
SI6928DQ-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2N-CH 30V 4A 8TSSO... |
SI6943BDQ-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2P-CH 12V 2.3A 8TS... |
SI6963BDQ-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2P-CH 20V 3.4A 8TS... |
SI6969BDQ-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2P-CH 12V 4A 8TSSO... |
SI6981DQ-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2P-CH 20V 4.1A 8-T... |
SI6983DQ-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2P-CH 20V 4.6A 8TS... |
SI6993DQ-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2P-CH 30V 3.6A 8TS... |
SI6925ADQ-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET 2N-CH 20V 3.3A 8-T... |
SI6928DQ-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET 2N-CH 30V 4A 8-TSS... |
SI6963BDQ-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET 2P-CH 20V 3.4A 8-T... |
SI6975DQ-T1-GE3 | Vishay Silic... | 0.6 $ | 1000 | MOSFET 2P-CH 12V 4.3A 8TS... |
SI6975DQ-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2P-CH 12V 4.3A 8TS... |
SI6924AEDQ-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET 2N-CH 28V 4.1A 8-T... |
SI6981DQ-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET 2P-CH 20V 4.1A 8-T... |
SI6993DQ-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET 2P-CH 30V 3.6A 8-T... |
SI6933DQ-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2P-CH 30V 8-TSSOPM... |
SI6933DQ-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET 2P-CH 30V 8-TSSOPM... |
SI6943BDQ-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET 2P-CH 12V 2.3A 8TS... |
SI6955ADQ-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2P-CH 30V 2.5A 8-T... |
SI6955ADQ-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET 2P-CH 30V 2.5A 8-T... |
SI6966DQ-T1-E3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET 2N-CH 20V 4A 8TSSO... |
SI6966DQ-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET 2N-CH 20V 4A 8TSSO... |
SI6966EDQ-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2N-CH 20V 8TSSOPMo... |
SI6966EDQ-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET 2N-CH 20V 8TSSOPMo... |
SI6967DQ-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2P-CH 8V 8TSSOPMos... |
SI6967DQ-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET 2P-CH 8V 8TSSOPMos... |
SI6969BDQ-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET 2P-CH 12V 4A 8TSSO... |
SI6969DQ-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2P-CH 12V 8TSSOPMo... |
SI6969DQ-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET 2P-CH 12V 8TSSOPMo... |
SI6973DQ-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2P-CH 20V 4.1A 8TS... |
SI6973DQ-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET 2P-CH 20V 4.1A 8TS... |
SI6983DQ-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET 2P-CH 20V 4.6A 8TS... |
SI6968BEDQ-T1-GE3 | Vishay Silic... | -- | 12000 | MOSFET 2N-CH 20V 5.2A 8-T... |
SI6954ADQ-T1-GE3 | Vishay Silic... | 0.22 $ | 6000 | MOSFET 2N-CH 30V 3.1A 8TS... |
SI6954ADQ-T1-E3 | Vishay Silic... | -- | 1500 | MOSFET 2N-CH 30V 3.1A 8TS... |
SI6968BEDQ-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2N-CH 20V 5.2A 8TS... |
SI6926ADQ-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2N-CH 20V 4.1A 8TS... |
SI6926ADQ-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET 2N-CH 20V 4.1A 8-T... |
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