Allicdata Part #: | SI7148DP-T1-E3TR-ND |
Manufacturer Part#: |
SI7148DP-T1-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 75V 28A PPAK SO-8 |
More Detail: | N-Channel 75V 28A (Tc) 5.4W (Ta), 96W (Tc) Surface... |
DataSheet: | SI7148DP-T1-E3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | PowerPAK® SO-8 |
Supplier Device Package: | PowerPAK® SO-8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 5.4W (Ta), 96W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2900pF @ 35V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 100nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 11 mOhm @ 15A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 28A (Tc) |
Drain to Source Voltage (Vdss): | 75V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The SI7148DP-T1-E3 is a Siliconix 30 V single N-channel depletion-mode MOSFET which offers lown on resistance. It is designed for low voltage, high speed switching applications such as motors, battery protection and many more. The device is offered in a space-saving SOIC-8 package. It features a low on-resistance and its low input capacitance ensures fast switching speed.
The internal construction of MOSFETs is comprised of three regions: the source, body, and drain regions. Gate terminal is used to control the flow of current between the source and the drain region. The electric field generated by the gate is used to control the width of the depletion region which in turn controls the effective resistance of the MOSFET. The conduction level of the MOSFET depends on the electric input voltage.
The SI7148DP-T1-E3 MOSFET is enhancement-type with depletion gate operation. This means excessive voltage must be applied to the gate in order to turn the device off and reduce its current. Input signal is applied to the gate of the MOSFET to control the current flow through the device. Higher gate voltage will cause the zone of depletion to expand, which reduces the current and turns off the MOSFET. Lower gate voltage reduces the depletion region, and allows the device to turn on, hence the current flows through the drain and source terminals.
The SI7148DP-T1-E3 is a highly reliable device for solid state switching in portable consumer applications. It can be used for powering small motors and battery protection applications. The low input capacitance of the device ensures fast switching speeds. The device is designed for low voltage applications. It can be used as a switch in automatic control equipment and digital logic circuits, such as relays and other control modules. Its low on-resistance ensures efficient delivery of energy.
The SI7148DP-T1-E3 is a versatile and highly reliable MOSFET device. It has numerous applications in consumer applications, battery protection, and low voltage control systems. It features low on-resistance for efficient energy delivery and low input capacitance for fast switching speed. The SOIC-8 package makes it easy-to-use and space-efficient. The device is designed for low voltage applications and offers a wide range of solutions for solid-state switching.
The specific data is subject to PDF, and the above content is for reference
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