SI9926BDY-T1-GE3

The SI9926BDY-T1-GE3 is part of a range of high voltage N-channel field effect transistors (FET) with a monolithic structure. It consists of two vertically integrated N-Channel FETs, with drain-source breakdown voltages of 600V and 250V, respectively. The device can provide a high on-conductance, low resistance and low gate-source threshold voltage.

The SI9926BDY-T1-GE3 is typically used in applications that require high voltage switching, such as in the automotive, power supply, and industrial environments. It can also be used in applications that require high-speed switching, such as power switching, motor control and medical equipment.

The SI9926BDY-T1-GE3 device operates using an N-channel region and a P-channel region. When the gate voltage is low and the transistor is not in operation, the P-channel region is open, allowing current to flow through the channel. When the gate voltage is raised, the P-channel region is closed and the N-channel region is open, allowing current to flow. The amount of current that can flow through the channel is determined by the gate-source voltage.

The device has dual complementary circuitry, which allows it to be used in push-pull topologies. Additionally, it has dV/dt protection, which prevents the transistor from being damaged by too rapid a change in voltage. It also has a temperature-compensated architecture, which helps to ensure that the transistor operates efficiently in a wide range of temperature conditions.

The SI9926BDY-T1-GE3 is an excellent choice for applications that require high voltage switching, as well as high-speed switching. Its dual complementary circuitry, dV/dt protection, and temperature-compensated architecture make it well-suited for power switching, motor control, and medical equipment applications.