SI9933CDY-T1-GE3 Discrete Semiconductor Products

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Introduction

SI9933CDY-T1-GE3 is a power MOSFET array device from Vishay Semiconductor. This article provides an overview of its application field and working principle.

Application Field

SI9933CDY-T1-GE3 is a 4-channel, 15-bit array ideal for fast switching applications. This device is ideal for a variety of functions, such as automotive, telecom and consumer application, including dc/dc converters, power supplies and DC motor control. This device is suitable for switching applications in the range of -55°C to 155°C P。

SI9933CDY-T1-GE3 has a drain-source breakdown voltage rating of 30V, gate-source threshold voltage of 1V, on-resistance RDS(on) of 8mΩ and an operating temperature range of -55°C to 155°C. It is designed for use in 3-phase driving circuits and provides excellent noise performance, transient response characteristics, and EMI noise reduction.

SI9933CDY-T1-GE3 is housed in a D3PAK and DPAK package which allows for thermal performance enhancements, and is also suitable for high- and low-temperature applications. This device offers lower switch On resistance and improved EMC performance. It also features a fail-safe protection feature, which prevents latch-up regardless of how many gates are ON.

Working Principle

The SI9933CDY-T1-GE3 is a 15-bit array of power metal-oxide-semiconductor field-effect transistors (MOSFETs) constructed on a single silicon die. The device contains four independant channels, each consisting of one n-channel and one p-channel power MOSFET, as well as a common source (GND) and drain (Vcc).

Each power MOSFET has a gate-threshold voltage of 1V, a drain-source breakdown voltage of 30V, and an on-resistance RDS(ON), typically 8mΩ. The device is designed for switching 3-phase circuits and handles high peak and rms currents up to 15A.

The MOSFETs are controlled by a voltage divider between the gate and the source of each MOSFET. The control voltage applied to the gate-source junction of each power MOSFET determines its operating state, defined as either "high" or "low" depending on the voltage level. When the voltage applied to the gate-source junction is equal to or greater than the threshold voltage, the power MOSFET is said to be in the "on" or conducting state, while when it is less than the threshold voltage, the MOSFET is "off".

The SI9933CDY-T1-GE3 also includes a \'fail-safe\' feature. This feature prevents latch-up, no matter how many gates are on. This feature provides protection against short circuits even if the output load is shorted.

Conclusion

The SI9933CDY-T1-GE3 is a 4-channel, 15-bit array ideal for fast switching applications in the range of -55°C to 155°C. It offers lower switch on resistance and improved EMC performance along with a fail-safe protection feature that prevents latch-up regardless of how many gates are on. It is suitable for switching applications in automotive, telecom and consumer applications, including dc/dc converters, power supplies and DC motor control.

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