SIP32102DB-T1-GE1 Allicdata Electronics

SIP32102DB-T1-GE1 Integrated Circuits (ICs)

Allicdata Part #:

SIP32102DB-T1-GE1TR-ND

Manufacturer Part#:

SIP32102DB-T1-GE1

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Vishay Siliconix
Short Description: IC BI-DIR BATT SWITCH WCSP12
More Detail: N/A
DataSheet: SIP32102DB-T1-GE1 datasheetSIP32102DB-T1-GE1 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Voltage - Load: 2.3 V ~ 5.5 V
Supplier Device Package: 12-WCSP (1.3x1.7)
Package / Case: 12-UFBGA, WLCSP
Operating Temperature: -40°C ~ 85°C (TA)
Fault Protection: --
Features: Slew Rate Controlled
Input Type: Non-Inverting
Rds On (Typ): 6.5 mOhm
Current - Output (Max): 7A
Voltage - Supply (Vcc/Vdd): Not Required
Series: --
Interface: On/Off
Output Type: P-Channel
Output Configuration: High Side
Ratio - Input:Output: 1:1
Number of Outputs: 1
Switch Type: General Purpose
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The SIP32102DB-T1-GE1 is a power distribution switch load driver designed for a wide range of applications. It features an integrated high-side NMOS switch and an integrated low-side PMOS switch. The device is designed to provide high-side and low-side load switching functions with analogue and digital inputs. The device is designed to provide a high level of reliability and efficient load switching control.

The SIP32102DB-T1-GE1 can be used in applications such as controlling LEDs, motors and other peripheral components. The device is suitable for use in PoE and other industrial systems, with data rates up to 1Gbps. It is also suitable for use in automotive and medical applications.

The SIP32102DB-T1-GE1 is an integrated device, which combines both high-side and low-side NMOS devices into a single package. This combined device has a wide operating range, from 5.5V to 40V. The device is constructed from high-quality, reliable and robust components, ensuring a long product life.

The device is designed to provide power distribution, load switching and protection functions in one device. It is capable of providing high-speed switching, independent of the logic voltage. The device provides protection against over-current, over-temperature, overload and under-voltage conditions.

The SIP32102DB-T1-GE1 has two independent high-side NMOS and low-side PMOS transistors. The two transistors are combined in a single package, enabling high-current switching as well as low-current switching. This gives the device great flexibility in terms of applications.

The device is designed to operate with input control logic ranging from 0V to 5V. It has a built-in logic-level translator and provides a buffered open drain output. This helps eliminate the need for external circuitry and enhances the versatility of the device.

The device is designed to be efficient, consuming less than 2mW in off-state and less than 30mW in on-state. It has a low standby current and a low quiescent current of 10uA. The device is also designed to be immune to ESD, EMI and EMC, making it ideal for use in industrial environments.

The device is also designed to be simple to use, with intuitive logic control inputs. It can be used in either an asynchronous or synchronous mode, depending on the requirements of the application. The device is designed for use in both high-side and low-side switching applications.

The SIP32102DB-T1-GE1 is a reliable and efficient power distribution switch load driver that is suitable for a wide range of applications. It is easy to use, efficient and immune to ESD, EMI and EMC. It is a versatile device that can be used in both high-side and low-side switching applications. It is an ideal solution for a range of industrial and automotive applications.

The specific data is subject to PDF, and the above content is for reference

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