Allicdata Part #: | SIS439DNT-T1-GE3TR-ND |
Manufacturer Part#: |
SIS439DNT-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET P-CH 30V 50A 1212-8 |
More Detail: | P-Channel 30V 50A (Tc) 3.8W (Ta), 52.1W (Tc) Surfa... |
DataSheet: | SIS439DNT-T1-GE3 Datasheet/PDF |
Quantity: | 3000 |
Vgs(th) (Max) @ Id: | 2.8V @ 250µA |
Package / Case: | PowerPAK® 1212-8S |
Supplier Device Package: | PowerPAK® 1212-8S (3.3x3.3) |
Mounting Type: | Surface Mount |
Operating Temperature: | -50°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.8W (Ta), 52.1W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2135pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 68nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 11 mOhm @ 14A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 50A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Last Time Buy |
Packaging: | Tape & Reel (TR) |
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The SIS439DNT-T1-GE3 is an advanced N-Channel Depletion resistor transistor component popular in a variety of applications. It is used for high current applications, as well as providing high-performance switching. The component is specifically designed to handle a maximum current of 39A with a total P maks of 350W.
The SIS439DNT-T1-GE3 is an advanced N-Channel Depletion resistor transistor component with a high forward current rating of 39A and a total P maks of 350W. The component includes several features that make it appealing for devices requiring high current. The component has an on-state R dson rating of 0.065ohms and a thermal resistance of 1.30 K/W.
The component is primarily used in high-power, high current applications and switching. The component is also well-suited for devices requiring long-term stability and reliability. It is specifically designed to handle large power and high current applications, as it is capable of handling 39A with a maximum P maks of 350W.
The component is based on the concept of a depletion transistor, which utilizes a resistive layer that varies its current output in response to a voltage change. This enables the component to regulate current in a stable, consistent manner. The component also offers a wide range of temperature ranges in which it can operate, with a maximum range of -55C to +150C.
The component is also constructed with robust construction materials, allowing it to handle high power and higher voltage applications. It includes a copper layer with a silvered-nickel plating that provides excellent conductivity, along with a proprietary contact technology that allows it to maintain contact and reduce noise. The component also includes a metallic substrate, which helps to reduce noise and ensure that the highest possible consistency of performance is achieved.
The component also includes several other features that make it ideal for high-power, high current applications. The component includes an integrated body diode with an avalanche breakdown voltage of approximately 5.5V to ensure that it can handle large parasitic loads. The component also has a low gate charge that helps to reduce power dissipation and minimize electrical losses.
Overall, the SIS439DNT-T1-GE3 is a highly-advanced N-Channel Depletion resistor transistor component designed for high current applications, as well as providing high-performance switching. It offers a wide range of temperature ranges in which it can operate and provides excellent conductivity with a proprietary contact technology. It also includes an integrated body diode with an avalanche breakdown voltage of approximately 5.5V and low gate charge to reduce power dissipation and minimize electrical losses.
The specific data is subject to PDF, and the above content is for reference
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