SM15T10A-E3/57T Allicdata Electronics

SM15T10A-E3/57T Circuit Protection

Allicdata Part #:

SM15T10A-E3/57TGITR-ND

Manufacturer Part#:

SM15T10A-E3/57T

Price: $ 0.22
Product Category:

Circuit Protection

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: TVS DIODE 8.55V 14.5V DO214AB
More Detail: N/A
DataSheet: SM15T10A-E3/57T datasheetSM15T10A-E3/57T Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
850 +: $ 0.20374
1700 +: $ 0.16299
2550 +: $ 0.14772
5950 +: $ 0.13753
21250 +: $ 0.13583
Stock 1000Can Ship Immediately
$ 0.22
Specifications
Current - Peak Pulse (10/1000µs): 103A
Base Part Number: SM15T*
Supplier Device Package: DO-214AB (SMCJ)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Series: SM15T, TransZorb®
Voltage - Clamping (Max) @ Ipp: 14.5V
Voltage - Breakdown (Min): 9.5V
Voltage - Reverse Standoff (Typ): 8.55V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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Transient Voltage Suppressor diodes (TVS) are solid state rectifiers designed to protect system circuits from high voltage events either due to contact or source wire failures or from inductive switching. The SM15T10A-E3/57T diode is a bidirectional TVS that has an unidirectional stand-off voltage of 15 Volts and a clamping voltage of 33 Volts.

The SM15T10A-E3/57T TVS diode is an ideal choice in applications that require a bidirectional voltage suppressor, such as in automotive electronics, power conditioning, and circuit protection systems. Its wide operating temperature range and low clamping voltage makes the device suitable for a variety of applications.

The SM15T10A-E3/57T diode is particularly suited for automotive applications due to its ability to provide protection from fast transient voltage events. It is also suitable for other industrial applications that require bidirectional protection from electrical overstress (EOS).

The working principle of the SM15T10A-E3/57T diode is based on the avalanche breakdown of the depletion region. The avalanche breakdown voltage is determined by the doping concentration of the depletion region and the silicon substrate. The SM15T10A-E3/57T diode uses a low doped, high voltage N channel integrated MOSFET (HV-MOSFET) technology with a maximum clamping and voltage peak power rating of 10 Amp and 200 watts respectively.

When the transient voltage event exceeds the clamping voltage of 33 Volts, the diode quickly places itself into a low impedance state. This effectively shorts the transient voltage resulting in a fast response time that limits the voltage it is exposed to and prevents damage to the protected circuit.

The bidirectional protection offered by the SM15T10A-E3/57T TVS diode makes it an ideal choice for applications requiring ESD and surge protection. Its low leakage current and low stand-off voltage ratings make it a reliable source of circuit protection. The ability to withstand high power transients and spikes makes it perfect for automotive and industrial applications.

The specific data is subject to PDF, and the above content is for reference

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