Allicdata Part #: | SMA5112-ND |
Manufacturer Part#: |
SMA5112 |
Price: | $ 3.76 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Sanken |
Short Description: | MOSFET 6N-CH 250V 7A 12-SIP |
More Detail: | Mosfet Array 6 N-Channel (3-Phase Bridge) 250V 7A ... |
DataSheet: | SMA5112 Datasheet/PDF |
Quantity: | 1000 |
1440 +: | $ 3.42327 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
FET Type: | 6 N-Channel (3-Phase Bridge) |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 250V |
Current - Continuous Drain (Id) @ 25°C: | 7A |
Rds On (Max) @ Id, Vgs: | 500 mOhm @ 3.5A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 450pF @ 10V |
Power - Max: | 4W |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | 12-SIP |
Supplier Device Package: | 12-SIP |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
SMA5112 is a series of high density dual power metal oxide semiconductor field effect transistor (MOSFET) arrays designed to provide metal oxide semiconductor logic and power switching applications. Based on MOSFET technology, SMA5112 offers Gate-Source voltages between 5V and 20V, Drain-Source Voltage up to 60V, and Drain current up to 50A. It provides space and cost savings benefits compared to using discrete components. In addition, this series consumes less power than older technology such as Bipolar Junction Transistors (BJT). SMA5112 also offers superior performance in terms of switching speed,gate drive capability and temperature drift.
SMA5112 is widely used for many general purpose and industrial control applications, such as motor control, robotics and power switching loads. For large motors, it provides low Rds (on), high output current and fast switching times which helps the designer reduce the motor size and noise due to current changes. It also provides improved thermal performance, allowing better heat dissipation.
The SMA5112 MOSFET array includes two power MOSFETs integrated together in a single package. It comprises two N-channel MOSFETs, in which source and drains pins are connected internally to form an integrated power switch. It is available in a range of voltages and currents, allowing the designer to choose a MOSFET array which is suitable for the particular application they are using. SMA5112 has a typical on-resistance of 80 mOhm at 10V and can switch up to 50A. It can operate at temperatures up to 175°C.
The internal structure of SMA5112 can be divided into two parts: the power MOSFETs, and the gate drive circuit. The power MOSFETs consist of two N-channel MOSFETs integrated together in the same package. Each MOSFET has its own source and drain terminals and share a common gate terminal. The power MOSFETs are internally connected in an “INVERTED” structure, meaning when one MOSFET is turned on, the other is turned off. This enables higher drive capabilities and improved electromagnetic interference (EMI) performance.
The gate drive circuit includes an optically coupled isolator and two buffers. It is designed to drive two gates with a single line, for better flexibility and simplified PCB routing. This gate drive circuit integrates all the necessary circuit elements such as bias, reference and level shifting, eliminating the need for a separate gate driver circuit. In addition, it provides both high frequency operation and low EMI performance.
The SMA5112 MOSFET array is a great choice for applications requiring fast switching, efficient power delivery, and superior thermal performance. Its low Rds (on) and high output current enable higher switching capability and reduced form factor compared to BJTs. The integrated gate drive circuit simplifies component count and makes PCB routing and design easier. With its wide voltage range and operating temperature, SMA5112 is suitable for a variety of applications ranging from motor control to robotics, and power switching loads.
The specific data is subject to PDF, and the above content is for reference
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