SMB8J28CAHE3/52 Allicdata Electronics
Allicdata Part #:

SMB8J28CAHE3/52-ND

Manufacturer Part#:

SMB8J28CAHE3/52

Price: $ 0.18
Product Category:

Circuit Protection

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: TVS DIODE 28V 45.4V DO214AA
More Detail: N/A
DataSheet: SMB8J28CAHE3/52 datasheetSMB8J28CAHE3/52 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
3000 +: $ 0.16306
Stock 1000Can Ship Immediately
$ 0.18
Specifications
Current - Peak Pulse (10/1000µs): 17.6A
Base Part Number: SMB8J
Supplier Device Package: DO-214AA (SMB)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: Automotive
Power Line Protection: No
Power - Peak Pulse: 800W
Series: Automotive, AEC-Q101, TransZorb®
Voltage - Clamping (Max) @ Ipp: 45.4V
Voltage - Breakdown (Min): 31.1V
Voltage - Reverse Standoff (Typ): 28V
Bidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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Introduction

TVS (transient voltage suppressor) diodes are semiconductor components designed to protect electric circuits from high voltage pulses or ESD (electrostatic discharge). The SMB8J28CAHE3/52 is a TVS diode whose structure and working principle are described in this paper.

Structure

The SMB8J28CAHE3/52 is an SMT (surface-mount technology) diode based on a vertical DO-214AC package. The device dimensions are 2200x900x600 mils. It has an ESD clamping voltage of 28V. The diode consists of an N-type substrate, a P-type well, and a P-type guardring. An N-type drift region connects to the output bus and consists of a thin layer of heavily-doped N-type material. The N-type substrate and P-type well are biased with the guard ring imposing a reverse bias between the N-type substrate and P-type well. This arrangement creates a diode junction across the two. This diode junction is the active region of the SMB8J28CAHE3/52.

Working Principle

The SMB8J28CAHE3/52 works by conducting excess voltage and current away from its active region. It does so by allowing current to flow through the diode junction when the voltage is above a certain threshold. The P-type drift region in the SMB8J28CAHE3/52 helps to ensure that it is capable of handling high voltages and has low capacitance. This enables it to provide effective protection against voltage surge and ESD events.The SMB8J28CAHE3/52 has an ESD clamping voltage of 28V. This means that it will protect the underlying circuitry when the voltage exceeds 28V. Furthermore, its low capacitance makes it suitable for use in high frequency applications.

Conclusion

The SMB8J28CAHE3/52 is a TVS diode designed to protect electric circuits from voltage surges and ESD events. It consists of an N-type substrate, a P-type well, and a P-type guardring which form a diode junction. When the applied voltage exceeds the ESD clamping voltage of 28V, the SMB8J28CAHE3/52 will conduct the excess current away, thus guarding against damage. With its low capacitance, the SMB8J28CAHE3/52 is well-suited for use in a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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