SMBG5360C/TR13 Allicdata Electronics
Allicdata Part #:

SMBG5360C/TR13-ND

Manufacturer Part#:

SMBG5360C/TR13

Price: $ 1.49
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: DIODE ZENER 25V 5W SMBG
More Detail: Zener Diode 25V 5W ±2% Surface Mount SMBG (DO-215A...
DataSheet: SMBG5360C/TR13 datasheetSMBG5360C/TR13 Datasheet/PDF
Quantity: 1000
3000 +: $ 1.34064
Stock 1000Can Ship Immediately
$ 1.49
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 25V
Tolerance: ±2%
Power - Max: 5W
Impedance (Max) (Zzt): 4 Ohms
Current - Reverse Leakage @ Vr: 500nA @ 18V
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: DO-215AA, SMB Gull Wing
Supplier Device Package: SMBG (DO-215AA)
Base Part Number: SMBG5360
Description

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Introduction of SMBG5360C/TR13

SMBG5360C/TR13 is a type of single Zener diode. It belongs to a class of bipolar junction transistor components, which are widely used in electronic devices. This diode is composed of two semiconductor junctions: N-type and P-type, arranged perpendicularly to each other.

Application Field of SMBG5360C/TR13

Due to its excellent features and superior performance, SMBG5360C/TR13 is usually applied in multiple electronic and electrical systems, such as electronic equipment, electronic circuits, power supplies, telecommunications, automotive industry, and audio systems.

Features of SMBG5360C/TR13

The features of SMBG5360C/TR13 single Zener diode which make it superior than other Zener diodes are: • High voltage stability• Low leakage current • High reliability through industry standard testing• Low capacitance• High temperature coefficient• Low dynamic impedance

Working Principle of SMBG5360C/TR13

The working principle of SMBG5360C/TR13 is based on a concept named the “Zener effect”. It occurs when electrons in the reverse biased P-N junction barrier tunnel through the insulating layer and collide with the atoms in the adjacent semiconductor material. This process induces a rapid recombination of the electrons and holes, which in turn releases energy, creating an electric field within the junction that cancels the potential barrier across the diode and allows the current to flow without restriction.The Zener diode works at both breakdown and reverse-bias conditions. Under the former, the electric field applied to the junction induces a current of electrons and holes that are accelerated by the electric field and freed from the junction with kinetic energy. In the latter, electrons escape the junction and can be accelerated by the reverse bias.

Conclusion

In conclusion, SMBG5360C/TR13 is a single Zener diode and boasts many excellent features. It is widely used in multiple electronic and electrical systems due to its superior performance. The working principle of SMBG5360C/TR13 is based on the Zener effect, which causes electrons to tunnel from a P-N junction layer and allows the current to flow freely.

The specific data is subject to PDF, and the above content is for reference

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