SPD07N60C3

Series:	CoolMOS™
Part Status:	Obsolete
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	600V
Current - Continuous Drain (Id) @ 25°C:	7.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	600 mOhm @ 4.6A, 10V
Vgs(th) (Max) @ Id:	3.9V @ 350µA
Gate Charge (Qg) (Max) @ Vgs:	27nC @ 10V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	790pF @ 25V
FET Feature:	--
Power Dissipation (Max):	83W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	PG-TO252-3
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63

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SPD07N60C3 Application Field and Working PrincipleThe SPD07N60C3 is a N-channel field effect transistor (FET) suitable for power-switching applications. This type of transistor is frequently used as a switch, due to its low on-resistance values and its ability to rapidly switch on and off. The SPD07N60C3 has a drain-to-source breakdown voltage of 600 V, a drain current of 7 A, and a low on-resistance of 0.034 Ω. In addition, it has a quad-layout package, which is designed to improve switching speed and reduce power loss. The SPD07N60C3 is typically used in applications such as motor drives, AC-DC converters, inverters, and DC-DC converters. It can also be used in high-frequency switching circuits, thanks to its low on-resistance values and its ability to rapidly switch on and off.To understand the operation of the SPD07N60C3, it is necessary to understand the basic principles of FETs and their operation. A FET is a three-terminal device, consisting of a gate, a source, and a drain. When a potential difference is applied to the gate-source terminals, a conductive channel is created between the source and the drain. This is known as carrier injection, and it allows for current flow between the source and the drain. The magnitude of the current depends on the magnitude of the applied voltage, the number of electrons injected into the channel, and the resistance of the channel. The on-state resistance of the FET is determined by the number of electrons injected into the channel and the shape of the conducting channel. When the source-gate voltage is above the threshold voltage, the FET is in the "on" state, while when the source-gate voltage is below the threshold voltage, the FET is in the "off" state.In the case of the SPD07N60C3, the maximum drain-source voltage is 600V. This means that it can easily handle the high voltage applications in motor drives, AC-DC converters, and DC-DC converters. The low on-resistance values of 0.034 Ω mean that this is an excellent choice for high-frequency switching circuits. Finally, the quad-layout package helps to reduce power loss and improve switching speed. In conclusion, the SPD07N60C3 is an excellent FET for power-switching applications. It can handle high voltages, has low on-resistance values, and its quad-layout package helps to reduce power loss and improve switching speed.

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