Allicdata Part #: | SQJ952EP-T1_GE3TR-ND |
Manufacturer Part#: |
SQJ952EP-T1_GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET 2 N-CH 60V POWERPAK SO8 |
More Detail: | Mosfet Array 2 N-Channel (Dual) 60V 23A (Tc) 25W (... |
DataSheet: | SQJ952EP-T1_GE3 Datasheet/PDF |
Quantity: | 15000 |
Series: | Automotive, AEC-Q101, TrenchFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 23A (Tc) |
Rds On (Max) @ Id, Vgs: | 20 mOhm @ 10.3A, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 30nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 1800pF @ 30V |
Power - Max: | 25W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | PowerPAK® SO-8 Dual |
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SQJ952EP-T1_GE3 is a type of transistor, specifically a Field-effect Transistor (FET), which belongs to MOSFETs - Arrays. This particular transistor is made using the Trenz Electronic’s SQUIGGLE Technology, which is specially designed for low-cost and low-power applications. It is an integrated circuit, which is ideal for analog and digital power electronics, general power switching and signal switching applications.
A field-effect transistor is a semiconductor device which consists of three terminals, the drain, the source and the gate. It is a voltage-controlled device which amplifies, switches, and attenuates signals. The source terminal is connected to a source of electrons, usually a voltage source, and the drain terminal is connected to a drain terminal. The gate terminal controls the current flowing between the drain and the source terminals.
SQJ952EP-T1_GE3 transistors are designed with four N-MOS transistors, with each transistor having its own gate terminal, enabling it to be controlled separately. This allows for a wide range of applications, such as power converter control, power regulation, H-bridge circuits, switching mode power supplies, motor control, and sensing and control applications.
These transistors also feature low on-resistance, and low gate-drain capacitance, making them suitable for high frequency switching. The overall power loss is decreased due to the low on-chip parasitic capacitance, as well as the no-body-effect and no-bias-level shift. The integrated circuit also provides temperature compensation for improved noise immunity and increased device temperature stability.
Furthermore, these transistors have a wide operating temperature range from -40 to +125 degrees Celsius, which makes them suitable for applications in very demanding environments. They also have a built-in ESD protection, which prevents them from damage due to electrostatic discharges. The overall size of the integrated circuit is small and compact, making them suitable for compact applications.
In conclusion, SQJ952EP-T1_GE3 transistors are highly efficient and reliable FETs which can be easily integrated into many different applications due to their small size, low power consumption, and wide operating temperature range. They are ideal for analog and digital power electronics, general power switching and signal switching applications. The low on-chip parasitic capacitance, no-body-effect, and no-bias-level shift make them suitable for high frequency switching. The built-in ESD protection and temperature compensation make them highly resistant to damage in demanding environments.
The specific data is subject to PDF, and the above content is for reference
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