SQP120N06-3M5L_GE3

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The SQP120N06-3M5L_GE3 is a high-performance N-Channel enhancement mode Metal Oxide Semiconductor Field Effect Transistor (MOSFET). It is part of a series of new low RDS(on) products that offers excellent RDS(on) x Qg characteristics. It offers high frequency switching performance and has an optimized package and layout design.

The SQP120N06-3M5L_GE3 is a compact and cost-effective solution for increasing efficiency in various applications. Its features are apparent in boosted flyback regulations, high Bandwidth DC-DC converters, Battery management systems and Class D audio amplifiers. It can also be used for HV DC-DC applications and DC motor drives. All these features make it an ideal product for high-density application designs.

The SQP120N06-3M5L is a low-voltage MOSFET that is designed to be used in a wide variety of high current switching applications. It features a tight gate threshold voltage and performs well at high-on/low-off resistance states, making it an ideal choice for high frequency and power conversion design, high efficiency rectification and fast switching applications.

The working principle of the SQP120N06-3M5L_GE3 is based upon a four layer device structure. When a positive gate voltage is applied to the Gate terminal, it creates an attractive field that induces mobilisation of the charge carriers in the region of the source and drain terminals. This in turn creates a channel that enables current to flow from the source to the drain. The size of this channel is determined by the magnitude of the applied gate voltage. The SQP120N06-3M5L_GE3 is unlike a Bipolar Junction Transistor which conducts current in both directions. A MOSFET, depending on its type (N-channel or P-channel) can conduct in only one direction. This type of operation ensures dynamic control between the gate and drain terminals.

The SQP120N06-3M5L_GE3 is also distinguished by its low drain-to-source on-resistance (RDS(on)). This low resistance is key in many AC/DC and DC/DC converter applications since it reduces the amount of self-heating within the device. Moreover, it reduces the amount of power dissipation which increases device efficiency, enabling the load current to be taken with minimum drops in the output voltage. Additionally, its maximum junction temperature (Tj) is typical 175 °C which makes it suitable for high temperature environments.

In conclusion, the SQP120N06-3M5L_GE3 is a compact, reliable and cost-effective solution for switching applications requiring up to 20V power. It is ideally suited for applications requiring fast switching, high efficiency and high-on/low-off resistance voltages. It is suitable for use in high-density applications where it can improve efficiency by reducing resistance, power dissipation and self-heating.

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