SS210LHR3G Allicdata Electronics
Allicdata Part #:

SS210LHR3G-ND

Manufacturer Part#:

SS210LHR3G

Price: $ 0.07
Product Category:

Discrete Semiconductor Products

Manufacturer: Taiwan Semiconductor Corporation
Short Description: DIODE SCHOTTKY 100V 2A SUB SMA
More Detail: Diode Schottky 100V 2A Surface Mount Sub SMA
DataSheet: SS210LHR3G datasheetSS210LHR3G Datasheet/PDF
Quantity: 1000
7200 +: $ 0.06432
Stock 1000Can Ship Immediately
$ 0.07
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 850mV @ 2A
Speed: Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr: 100µA @ 100V
Capacitance @ Vr, F: --
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Description

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The SS210LHR3G is a single rectifier diode designed for high reverse voltage power applications that require low current leakage. It is specifically designed for use in high temperature and humidity applications, and has a peak reverse voltage rating of 1250 Volts. This device has a low forward voltage drop and a high current carrying capacity, making it suitable for many power rectification applications. The SS210LHR3G is available in a variety of packages, including SOD-123F, SOD-517, SOD-723 and TO-220.

The SS210LHR3G is typically used in high voltage power rectification applications where low leakage current and high speed switching are required. Examples of these applications include automotive electronic components, consumer electronic components, telecommunication systems, and motor control systems. The SS210LHR3G is also widely used in DC-DC converters, bridge rectifiers, and other power rectification circuits which require low current leakage and high speed switching.

The working principle of the SS210LHR3G is based on the fact that P-N junction diodes are made of two semiconductor materials, one with a high number of electrons (N type) and one with a low number of electrons (P type). When a voltage is applied to the SS210LHR3G diode, electrons from the P-type material flow towards the N-type material, forming a conductive layer of electrons between the two. This layer of electrons allows current to flow from the P-type side of the diode, to the N-type side.

When the voltage reaches the peak reverse voltage rating of the SS210LHR3G (1250 Volts), the flow of current between the P-N junction is blocked. This is because the current is blocked by the buildup of electric field across the P-N junction, caused by the buildup of electrostatic charge carriers in the P-type material. This process is known as reverse bias, and prevents the diode from conducting current in the reverse direction.

In addition to this reverse current blocking ability, the SS210LHR3G also features low forward voltage drop and high current carrying capacity, making it suitable for many power rectification applications. The SS210LHR3G can handle large currents without wasting power, due to its low forward voltage drop. It also has a high current carrying capacity, allowing it to function efficiently in power rectification applications even under high current loads. These features make the SS210LHR3G an excellent choice for high voltage power rectification applications.

The specific data is subject to PDF, and the above content is for reference

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