Allicdata Part #: | SSM3K106TU(TE85L)TR-ND |
Manufacturer Part#: |
SSM3K106TU(TE85L) |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET N-CH 20V 1.2A UFM |
More Detail: | N-Channel 20V 1.2A (Ta) 500mW (Ta) Surface Mount U... |
DataSheet: | SSM3K106TU(TE85L) Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | π-MOSVI |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 1.2A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4V, 10V |
Rds On (Max) @ Id, Vgs: | 310 mOhm @ 600mA, 10V |
Vgs(th) (Max) @ Id: | 2.3V @ 100µA |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 36pF @ 10V |
FET Feature: | -- |
Power Dissipation (Max): | 500mW (Ta) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | UFM |
Package / Case: | 3-SMD, Flat Leads |
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The SSM3K106TU(TE85L) is a N-channel enhancement-mode power Mosfet designed specifically for 3.3V and 5V applications. It is commonly used in various applications such as power converters, motor control, and switching regulators. The device utilizes a high-purity silicon substrate and a 30mohm RDS(on) rating to provide low on-resistance performance, and thus minimize power loss. The SSM3K106TU(TE85L) offers significant advantages over traditional power Mosfets, including higher efficiency and lower on-resistance with maximum power dissipation.
The SSM3K106TU(TE85L) is an enhancement-mode MOSFET, meaning that an external gate voltage is applied to turn on or off the device. The device consists of an internal gate voltage generator, an N-type Mosfet, and a P-type substrate. A small electrical signal applied to the gate is amplified and results in a large current transfer between the drain-to-source. This current is controlled by the voltage applied to the gate terminal. When the gate is positive with respect to source, the MOSFET is turned “on” and allows current flow between the drain and source. When the gate is negative with respect to source (biased), the MOSFET is turned “off” and a small leakage current flows between the drain and source.
The SSM3K106TU(TE85L)is ideal for 3.3V and 5V applications due to its performance characteristics. Compared with traditional power mosfets, this MOSFET offers lower resistance and higher switching speeds. This is achieved by its 30mohm Rds(on) rating and 2.2nC gate charge (Qg) rating. The device is also capable of withstanding high voltage spikes due to its 600V drain-to-source breakdown voltage rating.
The SSM3K106TU(TE85L) is commonly used in power conversion applications such as buck, boost, Flyback, and SEPIC converters. It is used to switch current between the input and output of the converter. The device is also ideal for DC motor controllers and switched-mode regulators due to its high efficiency. In addition, the device is capable of withstanding high switching speeds, making it suitable for high-frequency switching applications. Furthermore, the device is capable of handling current spikes, making it suitable for automotive and industrial applications.
In summary, the SSM3K106TU(TE85L) is an ideal power MOSFET for 3.3V and 5V applications. The device offers lower on-resistance, higher efficiency, and faster switching speeds compared with traditional power MOSFETs. The device is commonly used in a wide range of applications such as power converters, motor controllers, and switched-mode regulators. Furthermore, the device is capable of handling current spikes, making it suitable for automotive and industrial applications.
The specific data is subject to PDF, and the above content is for reference
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