| Allicdata Part #: | SSM3K344RLFTR-ND |
| Manufacturer Part#: |
SSM3K344R,LF |
| Price: | $ 0.07 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Toshiba Semiconductor and Storage |
| Short Description: | SMALL LOW ON RESISTANCE MOSFET |
| More Detail: | N-Channel 20V 3A (Ta) 1W (Ta) Surface Mount SOT-23... |
| DataSheet: | SSM3K344R,LF Datasheet/PDF |
| Quantity: | 3000 |
| 3000 +: | $ 0.06129 |
| Vgs(th) (Max) @ Id: | 1V @ 1mA |
| Package / Case: | SOT-23-3 Flat Leads |
| Supplier Device Package: | SOT-23F |
| Mounting Type: | Surface Mount |
| Operating Temperature: | 150°C (TJ) |
| Power Dissipation (Max): | 1W (Ta) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 153pF @ 10V |
| Vgs (Max): | ±8V |
| Gate Charge (Qg) (Max) @ Vgs: | 2nC @ 4V |
| Series: | U-MOSVII-H |
| Rds On (Max) @ Id, Vgs: | 71 mOhm @ 3A, 4.5V |
| Drive Voltage (Max Rds On, Min Rds On): | 1.5V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C: | 3A (Ta) |
| Drain to Source Voltage (Vdss): | 20V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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The SSM3K344R,LF is an n-channel enhancement mode field effect transistor (FET) with a drain to source voltage of 30 volts and a drain current rating of 3.8 Amps. It is used mainly in power applications such as power switch and lighting. The SSM3K344R,LF is a single-gate MOSFET and is manufactured by surface mount technology for miniaturization, making it capable of handling as much power as regular discrete transistors at a fraction of the size. It is also highly efficient, saving up to 40% of the power consumption compared to regular transistors.
The SSM3K344R,LF uses a single-gate MOSFET design, where a metal-oxide semiconductor field-effect transistor (MOSFET) is typically used as a circuit element that allows current to flow between its source and drain when a positive voltage is applied to the gate. It can be used in a variety of applications, such as switching, amplification, and as power sources for RF applications. This single-gate MOSFET has a low on-state resistance (RDS(ON)) and is ideal for power switch applications that require minimum loss, such as high-efficiency light dimming, motor control, and over-voltage protection.
The SSM3K344R,LF is a single-gate MOSFET and features a low-noise operation, allowing it to be used in a wide range of applications where noise reduction is critical. It also has an enhanced ruggedness compared to traditional MOSFETs, with an improved performance and reliability over a wide range of operating temperature ranges. This makes it suitable for operating in extreme and difficult conditions, such as high shock, vibration, and temperature. It also has a high-density lithography process with a high contact reliability, which ensures that connections between the gate and drain do not suffer from oxidation or other electrical disturbances. Finally, its high pulse width modulation (PWM) frequency allows it to be used in more complex applications that demand faster switching.
The SSM3K344R,LF is a single-gate MOSFET with high power performance and efficiency that is ideal for power switch and lighting applications. It features a low on-state resistance and allows low noise operation even in extreme operating conditions. Its high pulse width modulation frequency allows it to be used in more complex applications that demand faster switching, which makes it an ideal choice for power switches, lighting control, and many other power control applications.
The specific data is subject to PDF, and the above content is for reference
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SSM3K344R,LF Datasheet/PDF