| Allicdata Part #: | 497-4320-2-ND |
| Manufacturer Part#: |
STB12NK80ZT4 |
| Price: | $ 1.70 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | STMicroelectronics |
| Short Description: | MOSFET N-CH 800V 10.5A D2PAK |
| More Detail: | N-Channel 800V 10.5A (Tc) 190W (Tc) Surface Mount ... |
| DataSheet: | STB12NK80ZT4 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 1.70000 |
| 10 +: | $ 1.64900 |
| 100 +: | $ 1.61500 |
| 1000 +: | $ 1.58100 |
| 10000 +: | $ 1.53000 |
| Vgs(th) (Max) @ Id: | 4.5V @ 100µA |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package: | D2PAK |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 190W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2620pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 87nC @ 10V |
| Series: | SuperMESH™ |
| Rds On (Max) @ Id, Vgs: | 750 mOhm @ 5.25A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 10.5A (Tc) |
| Drain to Source Voltage (Vdss): | 800V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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The STB12NK80ZT4 is an advanced N-Channel FET (Features Schottky) manufactured by STMicroelectronics that is designed primarily to effectively reduce switching losses within high-speed power switching applications that involve controlling currents up to 300A. It is especially suitable for application in server, computer, and notebook power supplies, DC/DC converters, and other electronics that involve controlling high-current application.
The STB12NK80ZT4 makes use of an advanced FMOS technology that helps improve switching performance and power density. The device also features low gate charge and low gate impedance, allowing it to achieve switching frequencies in excess of 10kHz. The improved switching performance and power density of the STB12NK80ZT4 make it ideal for high-current application.
The STB12NK80ZT4 mainly works through the application of an electrical signal to the gate terminal. This will switch the FET’s electrical connection between source and drain terminals. The source to drain conduction is activated when a positive signal is applied to the gate; alternatively if a negative signal is applied to the gate then the source-to-drain conduction is turned off. In other words, the STB12NK80ZT4 operates as a switch that, when activated, will allow the flow of electrical current between the source and drain terminals.
The STB12NK80ZT4 is also notable for its very low conduction losses. This ensures that the device will not suffer from a loss of power when high current is run through it. This is especially beneficial in power applications where high-current operation is necessary.
The application fields of the STB12NK80ZT4 include DC/DC converters, server and computer power supplies, and other electronic devices that require reducing power loss in high-current application. It is also a suitable replacement for large MOSFETs or IGBTs in motor-control or AC/DC power supply systems and also works great in power distribution and application.
The STB12NK80ZT4 is a highly efficient and reliable FET that is fantastic for application in applications that involve high current. Its advanced technology and features make it ideal for DC/DC converters, server and computer power supplies and power distribution systems, as well as other applications that benefit from improved switching performance and power density. It is an ideal solution for anyone looking for a reliable and efficient FET.
The specific data is subject to PDF, and the above content is for reference
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STB12NK80ZT4 Datasheet/PDF