STB12NK80ZT4 Allicdata Electronics
Allicdata Part #:

497-4320-2-ND

Manufacturer Part#:

STB12NK80ZT4

Price: $ 1.70
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 800V 10.5A D2PAK
More Detail: N-Channel 800V 10.5A (Tc) 190W (Tc) Surface Mount ...
DataSheet: STB12NK80ZT4 datasheetSTB12NK80ZT4 Datasheet/PDF
Quantity: 1000
1 +: $ 1.70000
10 +: $ 1.64900
100 +: $ 1.61500
1000 +: $ 1.58100
10000 +: $ 1.53000
Stock 1000Can Ship Immediately
$ 1.7
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 190W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2620pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 87nC @ 10V
Series: SuperMESH™
Rds On (Max) @ Id, Vgs: 750 mOhm @ 5.25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
Drain to Source Voltage (Vdss): 800V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The STB12NK80ZT4 is an advanced N-Channel FET (Features Schottky) manufactured by STMicroelectronics that is designed primarily to effectively reduce switching losses within high-speed power switching applications that involve controlling currents up to 300A. It is especially suitable for application in server, computer, and notebook power supplies, DC/DC converters, and other electronics that involve controlling high-current application.

The STB12NK80ZT4 makes use of an advanced FMOS technology that helps improve switching performance and power density. The device also features low gate charge and low gate impedance, allowing it to achieve switching frequencies in excess of 10kHz. The improved switching performance and power density of the STB12NK80ZT4 make it ideal for high-current application.

The STB12NK80ZT4 mainly works through the application of an electrical signal to the gate terminal. This will switch the FET’s electrical connection between source and drain terminals. The source to drain conduction is activated when a positive signal is applied to the gate; alternatively if a negative signal is applied to the gate then the source-to-drain conduction is turned off. In other words, the STB12NK80ZT4 operates as a switch that, when activated, will allow the flow of electrical current between the source and drain terminals.

The STB12NK80ZT4 is also notable for its very low conduction losses. This ensures that the device will not suffer from a loss of power when high current is run through it. This is especially beneficial in power applications where high-current operation is necessary.

The application fields of the STB12NK80ZT4 include DC/DC converters, server and computer power supplies, and other electronic devices that require reducing power loss in high-current application. It is also a suitable replacement for large MOSFETs or IGBTs in motor-control or AC/DC power supply systems and also works great in power distribution and application.

The STB12NK80ZT4 is a highly efficient and reliable FET that is fantastic for application in applications that involve high current. Its advanced technology and features make it ideal for DC/DC converters, server and computer power supplies and power distribution systems, as well as other applications that benefit from improved switching performance and power density. It is an ideal solution for anyone looking for a reliable and efficient FET.

The specific data is subject to PDF, and the above content is for reference

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