Allicdata Part #: | 497-8470-2-ND |
Manufacturer Part#: |
STB15NM60ND |
Price: | $ 2.38 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 600V 14A D2PAK |
More Detail: | N-Channel 600V 14A (Tc) 125W (Tc) Surface Mount D2... |
DataSheet: | STB15NM60ND Datasheet/PDF |
Quantity: | 1000 |
1000 +: | $ 2.16787 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 125W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1250pF @ 50V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 40nC @ 10V |
Series: | FDmesh™ II |
Rds On (Max) @ Id, Vgs: | 299 mOhm @ 7A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 14A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The STB15NM60ND is a state-of-the-art power MOSFET device capable of handling large amounts of power with excellent efficiency and low on-state resistance. It is designed for use in high-performance DC/DC converters and industrial applications, and is a popular choice for many applications. In this article, we will discuss the application fields of the STB15NM60ND and its working principles.
Application Fields
The STB15NM60ND’s excellent performance in power switching make it highly suitable for use in regulated voltage converters, such as those used in DC/DC converters and industrial applications. It is a popular choice for applications that require high efficiency, low on-resistance, and low cost. The STB15NM60ND is also suitable for switching power in consumer applications, including LED lighting, home appliances, and consumer electronics. Additionally, it is well-suited for automotive applications due to its ability to withstand high temperatures.
Working Principle
The STB15NM60ND is a single-ended, two-polarity power MOSFET device. It is based on the simple structure of a conventional MOSFET, which consists of a drain, a source, and a gate. The MOSFET device is capable of handling large currents due to its high breakdown voltage. The voltage is generated by the application of an external bias voltage across the gate and drain. The MOSFET also features an integrated gate protection resistor for safety.
When the external bias voltage is applied, it creates an electric field between the gate and the drain. This electric field causes the MOSFET to "turn on" and allow a current to flow from the source to the drain. The amount of current is determined by the size of the applied bias voltage and the resistance of the MOSFET. In order to turn the device off, the applied voltage is decreased to below the threshold voltage of the device, causing it to turn off.
Conclusion
The STB15NM60ND is a powerful and efficient single-polarity power MOSFET device. It has excellent performance in power switching applications and is suited for a variety of uses, including DC/DC converters, industrial applications, consumer electronics, and automotive applications. Its ability to withstand high temperatures and integrated gate protection resistor make it a popular choice for many applications.
The specific data is subject to PDF, and the above content is for reference
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