STB24N60M2

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	D2PAK
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	150W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1060pF @ 100V
Vgs (Max):	±25V
Gate Charge (Qg) (Max) @ Vgs:	29nC @ 10V
Series:	MDmesh™ II Plus
Rds On (Max) @ Id, Vgs:	190 mOhm @ 9A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	18A (Tc)
Drain to Source Voltage (Vdss):	600V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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STB24N60M2 is an N-Channel enhanced mode field-effect power transistor (MOSFET). This type of transistor provides high levels of power and speed and is mainly used in high-frequency switching applications. This device is suitable for power supplies, DC-DC converters, and other similar electronics applications.The STB24N60M2 is used in a variety of power switching applications and is typically employed in power supplies and motor control applications. The device is a low-on resistance device and provides enhanced performance over other models. Additionally, the device provides improved ESD protection, leading to better reliability. This device can also be used in high-frequency switching applications as it can handle switching rates up to 100 MHz.The STB24N60M2 has a high maximum drain current rating of 24A and a drain-source on resistance of only 0.041Ω. This makes the device ideal for high-current applications where the reduction of conduction losses is desirable. Additionally, the device offers improved thermal characteristics with a low junction-to-ambient thermal resistance of 0.50K/W.The STB24N60M2 is typically used in power supply and other switching applications. The device is composed of two components: a channel enhancement transistor and a control gate. The channel enhancement transistor is composed of three components: a base, a gate, and an emitter. The base of the channel enhancement transistor is connected to the negative supply of the system and is driven by the positive supply of the system. The gate is usually connected to a negative voltage source and the emitter is connected to the positive supply voltage.The control gate is connected to the source of the system and determines the amount of current that can flow through the channel. The gate voltage is usually varied in order to regulate the current flow. The STB24N60M2 is usually driven by an external signal or driver. This signal is typically either a low frequency pulse or a constant signal. When a signal or pulse is applied to the control gate, the channel is open, allowing current to flow through it.The STB24N60M2 can be used in a variety of switching applications including DC-DC converters, motor controllers, power supplies, and more. The low on-resistance and the low thermal resistance makes this device ideal for high-current switching applications. Additionally, its improved ESD protection and high switching speeds also make it ideal for high-speed applications. Overall, this device is a great choice for a variety of power switching applications.

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