Allicdata Part #: | 497-5730-ND |
Manufacturer Part#: |
STB25NM60N-1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 600V 21A I2PAK |
More Detail: | N-Channel 600V 21A (Tc) 160W (Tc) Through Hole I2P... |
DataSheet: | STB25NM60N-1 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Supplier Device Package: | I2PAK |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 160W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2400pF @ 50V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 84nC @ 10V |
Series: | MDmesh™ II |
Rds On (Max) @ Id, Vgs: | 160 mOhm @ 10.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 21A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The STB25NM60N-1 is a type of transistor known as a MOSFET, or metal-oxide semiconductor field-effect transistor. MOSFETs are used in a wide variety of applications, from low-voltage motors to high-voltage switching systems. The STB25NM60N-1 is specifically designed for use in power switching applications, providing efficient switching with low on-state resistance and fast switching times.
This model of MOSFET is a single-N-channel type, meaning that it has only one transistor and one source of current. It has an efficient power loss of only 8.3mW and a low on-state resistance of only 0.67Ohm. The STB25NM60N-1 is designed to operate with continuous drain current up to 25A, and drain-source voltage up to 600V. This makes the device suitable for many power switching applications, including motor controls, solenoids, and high-current switches.
The working principle of the STB25NM60N-1 is based on the concept of a field-effect transistor. In a MOSFET, current is controlled by the application of a voltage to the gate of the transistor. When the gate voltage is applied, the transistor enters an "on" state, which allows current to flow from the source to the drain. As the voltage is increased, the conduction of current is also increased. The current flow is then regulated by the resistance of the channel (the source to drain connection).
The STB25NM60N-1 is designed to be particularly efficient when used for power switching applications. Its low on-state resistance allows it to switch on and off quickly, resulting in lower power loss. Its high drain-source voltage rating also allows it to be used in high voltage applications. This makes it ideal for motor control, high-current switching, and other power switching applications.
In conclusion, the STB25NM60N-1 is a single-N-channel MOSFET that is designed for use in power switching applications. It has an efficient power loss of only 8.3mW and a low on-state resistance of only 0.67Ohm, making it particularly suitable for motor control, solenoids, and high-current switches. Its efficient working principle makes it well-suited for high voltage applications, while its low on-state resistance allows it to switch on and off quickly. All these factors make the STB25NM60N-1 an ideal choice for power switching applications.
The specific data is subject to PDF, and the above content is for reference
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