Allicdata Part #: | 497-6551-2-ND |
Manufacturer Part#: |
STB36NF06LT4 |
Price: | $ 0.46 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 60V 30A D2PAK |
More Detail: | N-Channel 60V 30A (Tc) 70W (Tc) Surface Mount D2PA... |
DataSheet: | STB36NF06LT4 Datasheet/PDF |
Quantity: | 1000 |
2000 +: | $ 0.41586 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 70W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 660pF @ 25V |
Vgs (Max): | ±18V |
Gate Charge (Qg) (Max) @ Vgs: | 17nC @ 5V |
Series: | STripFET™ II |
Rds On (Max) @ Id, Vgs: | 40 mOhm @ 15A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 30A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The STB36NF06LT4 is a single N-Channel MOSFET transistor, which belongs to the Field Effect Transistor semiconductor family. This product is optimized with low gate charge, low gate/subthreshold and output capacitance, low on-resistance and very fast switching speed. Its excellent performance makes it ideal for applications like high speed switching, power management and synchronous rectification in DC-DC converters.
As a single N-Channel MOSFET, the STB36NF06LT4 is one of the most commonly used components in electronic circuits. This type of transistor allows the flow of electrical current across the channel between the source and the drain. The flow of current is controlled by an externally applied electric field, which is generated by applying a voltage between the gate and the source.
When a positive voltage is applied to the gate of the transistor it will create an electric field, which is the electrostatic equivalent of the potential barrier that separates the source and the drain. This electric field will cause electrons to be attracted to the gate, thus enabling current to pass through the channel between the source and the drain. The amount of current that is allowed to pass through is determined by the strength of the electric field which is controlled by the externally applied voltage.
The STB36NF06LT4 is optimized for high speed switching applications and power management applications. Its fast switching speed allows for high frequency control signals to be generated, allowing for the quick management of current states. Its internal capacitance is minimized, allowing for improved electromagnetic interference (EMI) protection, and its low gate charge reduces power loss during switching cycles.
Due to its excellent performance characteristics, the STB36NF06LT4 is a popular choice in power circuits as it is well suited for power management, synchronous rectification, and high frequency switching applications. This device’s low gate charge and output capacitance, combined with its low on-resistance, make it highly efficient and reliable in applications that require fast switching times.
Overall, the STB36NF06LT4 is an excellent choice for designing circuits that require fast switching speeds and efficient power management. Its excellent characteristics make it a great choice for many different applications such as power management, synchronous rectification, and high frequency switching.
The specific data is subject to PDF, and the above content is for reference
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