
Allicdata Part #: | 497-8477-2-ND |
Manufacturer Part#: |
STD11NM60ND |
Price: | $ 1.17 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 600V 10A DPAK |
More Detail: | N-Channel 600V 10A (Tc) 90W (Tc) Surface Mount DPA... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | $ 1.17000 |
10 +: | $ 1.13490 |
100 +: | $ 1.11150 |
1000 +: | $ 1.08810 |
10000 +: | $ 1.05300 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | DPAK |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 90W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 850pF @ 50V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 30nC @ 10V |
Series: | FDmesh™ II |
Rds On (Max) @ Id, Vgs: | 450 mOhm @ 5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 10A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The STD11NM60ND is a N-channel enhancement-mode power field-effect transistor with a long-standing good reputation in the electronics industry. It has a continuous drain current rating of 60 Amps, 4.55 V drain-source voltage, and a low on-resistance of 0.00604 ohms. The casing for the transistor is available in the standard TO-220 power package, making it compact and easy to mount on a printed circuit board.
The device is ideal for a variety of applications such as power regulators and converters, DC/DC and AC/DC motor controllers, synchronous rectification, and as a switching device in power supplies. It is a very reliable and efficient transistor and can be used in any circuit that needs an adjustable current regulator.
The STD11NM60ND transistor is designed with a dual-gate structure and an enhancement-mode operation. This design allows the user to increase or reduce the drain-source voltage to achieve the desired current flow. The device also offers excellent protection against high voltages, thanks to its high voltage breakdown protection levels. The internal gate oxide material of the device also provides excellent immunity against electrostatic discharge.
The transistors are also designed to be temperature stable. This ensures that the gate-source voltage does not vary with temperature increases and decreases, thus eliminating the need for a low-temperature compensation circuit. The device can also operate at high temperatures and still maintain good performance.
The circuit design for the STD11NM60ND is quite simple. The device has an input and output connected to each other through the transistor gates. When the gate voltage is high, the device is off and current does not flow. When the gate voltage is low, the transistor turns on and current flows between the input and output. The drain current is then determined by the gate voltage and the drain-source voltage.
Due to its excellent features and performance, the STD11NM60ND has become among the most trusted transistors used in electronic equipment and circuits. The device is also easy to install and use, making it perfect for a variety of applications. From power regulators to synchronous rectification, the transistors are reliable and efficient in providing the desired current flow.
The specific data is subject to PDF, and the above content is for reference
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